QS6U24TR Rohm Semiconductor, QS6U24TR Datasheet - Page 3

• Manufacturer Part Number: QS6U24TR
• Description: MOSFET P-CH 30V 1A TSMT6
• Manufacturer: Rohm Semiconductor

Specifications of QS6U24TR

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Diode (Isolated)
• Rds On (max) @ Id, Vgs: 400 mOhm @ 1A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 1A
• Vgs(th) (max) @ Id: 2.5V @ 1mA
• Gate Charge (qg) @ Vgs: 1.7nC @ 5V
• Input Capacitance (ciss) @ Vds: 90pF @ 10V
• Power - Max: 900mW
• Mounting Type: Surface Mount
• Package / Case: TSMT6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Transistor
0.001
Electrical characteristic curves
0.01
0.01
0.1
0.1
10
10
10000
Fig.1 Typical Transfer Characteristics
1
1
1000
Fig.7 Reverse Drain Current vs.
100
0
1
SOURCE-DRAIN VOLTAGE : −V
GATE-SOURCE VOLTAGE : −V
Fig.4 Static Drain-Source On-State
0.1
Ta=125°C
Ta=−25°C
Ta=125°C
Ta=−25°C
Ta=75°C
Ta=25°C
Ta=75°C
Ta=25°C
1.5
Source-Drain Voltage
0.5
DRAIN CURRENT : −I
Resistance vs. Drain Current (ΙΙΙ)
2
Ta=125°C
Ta=−25°C
Ta=75°C
Ta=25°C
2.5
3
1
1
3.5
1.5
4
V
Pulsed
DS
D
V
Pulsed
=−10V
(A)
GS
4.5
GS
V
Pulsed
SD
GS
=0V
(V)
(V)
=−4V
5
2
10
10000
1000
1000
1200
1100
1000
100
100
900
800
700
600
500
400
300
200
10
Fig.5 Static Drain-Source On-State
0.01
Fig.2 Static Drain-Source On-State
0.1
0
DRAIN-SOURCE VOLTAGE : −V
Fig.8 Typical Capacitance vs.
GATE-SOURCE VOLTAGE :
2
Resistance vs. Gate-Source
Voltage
DRAIN CURRENT : −I
Resistance vs. Drain Current (Ι)
Ta=125°C
Ta=−25°C
Ta=75°C
Ta=25°C
Drain-Source Voltage
0.1
4
I
I
D
D
6
=−1.2A
=−0.6A
1
1
8
10
D
10
V
Pulsed
12
Ta=25°C
f=1MH
V
(A)
−
GS
Ta=25°C
Pulsed
GS
V
=−10V
GS
C
C
C
=0V
DS
14
iss
oss
rss
( V)
Z
(V)
100
10
16
10000
10000
1000
1000
100
100
1000
100
Fig.3 Static Drain-Source On-State
0.1
Fig.6 Static Drain-Source On-State
10
0.1
1
0.01
Fig.9 Switching Characteristics
DRAIN CURRENT : −I
V
V
DRAIN CURRENT : −I
Resistance vs. Drain Current (ΙΙ)
Resistance vs. Drain Current ( )
V
Ta=125°C
Ta=−25°C
DRAIN CURRENT : −I
GS
GS
Ta=75°C
Ta=25°C
GS
=−4.0V
=−4.5V
=−10V
0.1
Rev.B
t
t
t
d(on)
r
f
1
1
QS6U24
t
d(off)
1
D
D
V
Pulsed
Ta=25°C
Pulsed
D
Ta=25°C
V
V
R
Pulsed
(A)
(A)
GS
DD
GS
G
(A)
=−4.5V
=10Ω
=−15V
=−10V
3/4
10
10
10