QS6U24TR Rohm Semiconductor, QS6U24TR Datasheet - Page 2

• Manufacturer Part Number: QS6U24TR
• Description: MOSFET P-CH 30V 1A TSMT6
• Manufacturer: Rohm Semiconductor

Specifications of QS6U24TR

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Diode (Isolated)
• Rds On (max) @ Id, Vgs: 400 mOhm @ 1A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 1A
• Vgs(th) (max) @ Id: 2.5V @ 1mA
• Gate Charge (qg) @ Vgs: 1.7nC @ 5V
• Input Capacitance (ciss) @ Vds: 90pF @ 10V
• Power - Max: 900mW
• Mounting Type: Surface Mount
• Package / Case: TSMT6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Transistor
<
∗ Pulsed
<
<
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-starte
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source
Gate-drain
Forward voltage
Forward voltage drop
Reverse current
MOSFET
Body diode (source-drain)
Di
Electrical characteristics (Ta=25°C)
>
Parameter
Parameter
Parameter
>
charge
charge
>
V
Symbol
Symbol
Symbol
R
V
(BR) DSS
t
t
C
I
I
C
V
GS (th)
DS (on)
C
d (on)
d (off)
Q
Q
Y
Q
GSS
DSS
V
I
t
t
oss
SD
R
iss
rss
r
gd
fs
f
gs
F
g
∗
∗
∗
∗
∗
∗
Min.
−1.0
Min.
Min.
−30
0.5
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
Typ.
Typ.
Typ.
300
500
600
1.7
0.6
0.4
90
25
16
18
−
−
−
−
−
9
7
7
−
−
−
Max.
Max.
Max.
−2.5
−1.2
0.49
±10
400
700
800
200
−1
−
−
−
−
−
−
−
−
−
−
−
−
Unit
Unit
Unit
mΩ
mΩ
mΩ
µA
µA
pF
pF
pF
nC
nC
nC
µA
ns
ns
ns
ns
V
V
S
V
V
V
I
V
V
I
I
I
V
V
V
f=1MHz
I
V
V
R
R
V
V
I
I
I
V
D
D
D
D
D
D
S
F
GS
DS
DS
DS
DS
GS
DD
GS
DD
GS
R
L
G
=−0.3A, V
=0.7A
= −1mA, V
= −1A, V
= −0.5A, V
= −0.5A, V
= −0.5A
= −1.0A
=30Ω
=20V
=10Ω
=±20V, V
= −30V, V
= −10V, I
= −10V, I
= −10V
=0V
= −4.5V
= −5V
−15 V
−15 V
GS
Conditions
Conditions
Conditions
GS
GS
GS
GS
D
= −10V
D
DS
GS
= −1mA
= −0.5A
=0V
=0V
= −4.5V
= −4V
=0V
=0V
Rev.B
QS6U24
2/4