RK3055ETL Rohm Semiconductor, RK3055ETL Datasheet
RK3055ETL
Specifications of RK3055ETL
RK3055ETLTR
Related parts for RK3055ETL
RK3055ETL Summary of contents
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Transistors 10V Drive Nch MOSFET RK3055E Structure Silicon N-channel MOSFET Features 1) Low On-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) 10V drive. 5) Drive circuits can be simple. 6) Parallel use is easy. Applications Switching ...
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Transistors Electrical characteristics (Ta=25°C) Parameter Symbol Gate-source leakage Drain-source breakdown voltage V Zero gate voltage drain current Gate threshold voltage R Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time ...
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Transistors 0.3 Ta=25°C Pulsed 0.2 I =5A D 2.5A 0 (V) GATE-SOURCE VOLTAGE : V GS Fig.7 Static Drain-Source On-State Resistance Fig.9 vs. Gate-Source Voltage 10 V =0V GS Pulsed 5 Ta=125°C 75°C 2 25°C −25°C ...
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Transistors 10 D=1 1 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 Single pulse 0.001 1µ 100µ 1m 10m (s) PULSE WIDTH : PW Fig.15 Normalized Transient Thermal Resistance vs. Pulse Width Switching characteristics measurement circuit ...
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Appendix No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM CO.,LTD. The content specified herein is subject to change for improvement without notice. The content specified herein is for the ...