RK3055ETL Rohm Semiconductor, RK3055ETL Datasheet - Page 2

• Manufacturer Part Number: RK3055ETL
• Description: MOSFET N-CH 60V 8A DPAK
• Manufacturer: Rohm Semiconductor

Specifications of RK3055ETL

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 150 mOhm @ 4A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 8A
• Vgs(th) (max) @ Id: 2.5V @ 1mA
• Input Capacitance (ciss) @ Vds: 520pF @ 10V
• Power - Max: 20W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Cpt3: N-CHAN
• Continuous Drain Current Id: 4A
• Drain Source Voltage Vds: 60V
• On Resistance Rds(on): 150mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 20V
• Operating Temperature Range: -55°C To
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.15 Ohm @ 10 V
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 8 A
• Power Dissipation: 20000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Threshold Voltage Vgs Typ: 2.5V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: RK3055ETL; RK3055ETLTR

Transistors
∗
Electrical characteristics (Ta=25°C)
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Electrical characteristics curve
Pw
0.5
0.2 Tc=25°C
0.1
4.0
3.0
2.0
1.0
50
20
10
−50
5
2
1
0
0.5
Fig.1 Maximum Safe Operating Area
≤
Single pulse
300µs, Duty cycle
Fig.4 Gate Threshold Voltage
Fig.9
CHANNEL TEMPERATURE : T ch
−25
DRAIN-SOURCE VOLTAGE : V
1
Parameter
vs. Channel Temperature
0
2
25
5
50
≤
1%
10
75
20
100 125 150
V
I
D
DS
= 1mA
DS
= 10V
(°C)
50
(V)
100
Symbol
V
R
V
(BR)DSS
t
t
I
I
Y
C
C
C
DS(on)
GS(th)
d(on)
d(off)
GSS
DSS
t
t
fs
oss
rss
iss
r
f
Fig.5 Static Drain-Source On-State Resistance
Fig.9
∗
0.05
0.02
0.01
0.5
0.2
0.1
10
10
0.01
vs. Drain Current ( Ι )
5
2
1
Min.
9
8
7
6
5
4
3
2
1
0
1.0
4.0
Fig.2 Typical Output Characteristics
0
60
−
−
−
−
−
−
−
−
−
−
V
Pulsed
GS
0.02
DRAIN-SOURCE VOLTAGE : V
= 10V
1
0.05 0.1
Ta=125°C
DRAIN CURRENT : I
Typ.
520
240
100
5.0
20
50
20
−
−
−
−
−
−
−25°C
75°C
25°C
2
0.2
10V
± 100
8V
6V
5V
Max.
0.15
2.5
10
−
−
−
−
−
−
−
−
−
0.5
3
1
D
V
Unit
(A)
nA
µA
pF
pF
pF
GS
ns
ns
ns
ns
2
Ω
V
V
S
Ta = 25°C
Pulsed
=3V
4
4V
DS
(V)
5
V
I
V
V
I
I
V
V
f=1MHz
I
V
R
R
10
D
D
D
D
5
GS
DS
DS
DS
G
GS
L
G
=1mA, V
=4A, V
=4A, V
=2.5A, V
=12Ω
=0V
=10Ω
=60V, V
=10V, I
=10V
= ± 20V, V
=10V
Fig.6 Static Drain-Source On-State Resistance
Fig.9
0.05
0.02
0.01
0.05
0.02
0.01
Test Conditions
0.5
0.2
0.1
0.5
0.2
GS
DS
0.1
10
10
Fig.3 Typical Transfer Characteristics
vs. Drain Current ( ΙΙ )
5
2
1
5
2
1
0.01 0.02 0.05
GS
DD
=15V
0
=10V
D
GS
V
=1mA
Pulsed
V
Pulsed
=0V
DS
DS
Ta=125°C
GS
GATE-SOURCE VOLTAGE : V
=0V
= 10V
1
= 4V
=0V
30V
−25°C
75°C
25°C
DRAIN CURRENT : I
Ta=125°C
2
0.1 0.2
−25°C
75°C
25°C
3
Rev.B
4
RK3055E
0.5
5
1.0 2.0
D
6
(A)
GS
(V)
7
5.0 10.0
2/4
8