RK3055ETL Rohm Semiconductor, RK3055ETL Datasheet - Page 4

• Manufacturer Part Number: RK3055ETL
• Description: MOSFET N-CH 60V 8A DPAK
• Manufacturer: Rohm Semiconductor

Specifications of RK3055ETL

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 150 mOhm @ 4A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 8A
• Vgs(th) (max) @ Id: 2.5V @ 1mA
• Input Capacitance (ciss) @ Vds: 520pF @ 10V
• Power - Max: 20W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Cpt3: N-CHAN
• Continuous Drain Current Id: 4A
• Drain Source Voltage Vds: 60V
• On Resistance Rds(on): 150mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 20V
• Operating Temperature Range: -55°C To
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.15 Ohm @ 10 V
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 8 A
• Power Dissipation: 20000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Threshold Voltage Vgs Typ: 2.5V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: RK3055ETL; RK3055ETLTR

Transistors
Fig.15 Normalized Transient Thermal Resistance vs. Pulse Width
Fig.16 Switching Time Test Circuit
Switching characteristics measurement circuit
0.001
0.01
10
0.1
R
1
1µ
G
0.2
D=1
0.5
0.1
0.05
0.02
0.01
Single pulse
V
GS
100µ
D.U.T.
PULSE WIDTH : PW
I
1m
D
10m
R
V
DD
L
V
(s)
DS
Tc=25°C
θ
θ
100m
th (ch-c)
th (ch-c)
PW
=6.25°C/W
(t)=r (t) θ
T
1
D= PW
th (ch-c)
V
V
T
GS
DS
10
t
Fig.17 Switching Time Waveforms
d (on)
10%
t
50%
on
10%
t
r
Pulse Width
90%
90%
t
d (off)
t
off
t
f
50%
10%
90%
Rev.B
RK3055E
4/4