PSMN4R0-30YL,115 NXP Semiconductors, PSMN4R0-30YL,115 Datasheet
PSMN4R0-30YL,115
Specifications of PSMN4R0-30YL,115
934063074115
PSMN4R0-30YL T/R
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PSMN4R0-30YL,115 Summary of contents
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... PSMN4R0-30YL N-channel mΩ logic level MOSFET in LFPAK Rev. 04 — 10 March 2011 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. This product is designed and qualified for use in industrial and communications applications. 1.2 Features and benefits ...
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... Figure °C; see Figure °C mb ≤ 10 µs; T pulsed ° j(init) ≤ Ω; unclamped V sup GS All information provided in this document is subject to legal disclaimers. Rev. 04 — 10 March 2011 PSMN4R0-30YL Graphic symbol mbb076 Version Min Max - 30 ≤ 160 nJ DS(AL kΩ -20 20 Figure Figure 1 ...
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... N-channel mΩ logic level MOSFET in LFPAK 003aac649 P (%) 150 200 T (°C) mb Fig DSon All information provided in this document is subject to legal disclaimers. Rev. 04 — 10 March 2011 PSMN4R0-30YL 120 der 100 Normalized total power dissipation as a function of mounting base temperature 10 μs 100 μ 100 ms 10 ...
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... Transient thermal impedance from junction to mounting base as a function of pulse duration PSMN4R0-30YL Product data sheet N-channel mΩ logic level MOSFET in LFPAK Conditions see Figure All information provided in this document is subject to legal disclaimers. Rev. 04 — 10 March 2011 PSMN4R0-30YL Min Typ Max - 1 1.82 003aac648 t p δ ...
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... Figure 14; see Figure see Figure 14; DS see Figure MHz °C; see Figure 0.5 Ω 4.7 Ω R G(ext) All information provided in this document is subject to legal disclaimers. Rev. 04 — 10 March 2011 PSMN4R0-30YL Min Typ Max = 25 ° -55 ° 1.3 1.7 2. 100 - - 100 = 25 ° ...
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... Figure /dt = -100 A/µ 003aac639 25 ° (V) GS Fig 6. 003aac642 4 100 I (A) D Fig 8. All information provided in this document is subject to legal disclaimers. Rev. 04 — 10 March 2011 PSMN4R0-30YL Min Typ = 25 ° 120 (A) V (V) = 3.2 GS 4.5 100 Output characteristics: drain current as a function of drain-source voltage; typical values ...
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... V (V) GS Fig 10. Drain-source on-state resistance as a function 003aab271 typ max Fig 12. Gate-source threshold voltage as a function of All information provided in this document is subject to legal disclaimers. Rev. 04 — 10 March 2011 PSMN4R0-30YL 5 R DSon (mΩ gate-source voltage; typical values (th) (V) max 2 typ ...
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... N-channel mΩ logic level MOSFET in LFPAK 03aa27 120 180 ( ° Fig 14. Gate charge waveform definitions 003aac647 ( (nC) G Fig 16. Input, output and reverse transfer capacitances All information provided in this document is subject to legal disclaimers. Rev. 04 — 10 March 2011 PSMN4R0-30YL GS(pl) V GS(th GS1 GS2 ...
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... Product data sheet N-channel mΩ logic level MOSFET in LFPAK 100 150 ° 0.0 0.2 0.4 0.6 All information provided in this document is subject to legal disclaimers. Rev. 04 — 10 March 2011 PSMN4R0-30YL 003aac640 25 °C 0.8 1.0 V (V) SD © NXP B.V. 2011. All rights reserved ...
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... D max 4.41 2.2 0.9 0.25 0.30 4.10 4.20 3.62 2.0 0.7 0.19 0.24 3.80 REFERENCES JEDEC JEITA MO-235 All information provided in this document is subject to legal disclaimers. Rev. 04 — 10 March 2011 PSMN4R0-30YL detail (1) (1) ( 5.0 3.3 6.2 0.85 1.3 1.27 4.8 3.1 5 ...
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... N-channel mΩ logic level MOSFET in LFPAK Data sheet status Change notice Product data sheet - Product data sheet - All information provided in this document is subject to legal disclaimers. Rev. 04 — 10 March 2011 PSMN4R0-30YL Supersedes PSMN4R0-30YL v.3 PSMN4R0-30YL v.2 © NXP B.V. 2011. All rights reserved ...
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... In case an individual agreement is concluded only the terms and conditions of the respective All information provided in this document is subject to legal disclaimers. Rev. 04 — 10 March 2011 PSMN4R0-30YL © NXP B.V. 2011. All rights reserved ...
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... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 04 — 10 March 2011 PSMN4R0-30YL Trademarks © NXP B.V. 2011. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 10 March 2011 Document identifier: PSMN4R0-30YL ...