PSMN4R0-30YL,115 NXP Semiconductors, PSMN4R0-30YL,115 Datasheet - Page 6

• Manufacturer Part Number: PSMN4R0-30YL,115
• Description: MOSFET N-CH 30V 100A LFPAK
• Manufacturer: NXP Semiconductors

Specifications of PSMN4R0-30YL,115

• Package / Case: LFPak-4
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 4 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 100A
• Vgs(th) (max) @ Id: 2.15V @ 1mA
• Gate Charge (qg) @ Vgs: 36.6nC @ 10V
• Input Capacitance (ciss) @ Vds: 2090pF @ 12V
• Power - Max: 69W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single Triple Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 4 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 100 A
• Power Dissipation: 69 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-4683-2; 934063074115; PSMN4R0-30YL T/R

NXP Semiconductors
Table 6.
Tested to JEDEC standards where applicable.
PSMN4R0-30YL
Product data sheet
Symbol
Source-drain diode
V
t
Q
rr
Fig 5.
Fig 7.
SD
r
R
(mΩ)
DSon
(A)
80
60
40
20
10
I
D
0
8
6
4
2
function of gate-source voltage; typical values
of drain current; typical values
Transfer characteristics: drain current as a
Drain-source on-state resistance as a function
0
0
Characteristics
Parameter
source-drain voltage
reverse recovery time
recovered charge
20
1
V
GS
T
j
= 150 °C
(V) = 3.2
40
…continued
2
60
25 °C
4.5
10
3
80
All information provided in this document is subject to legal disclaimers.
V
003aac639
003aac642
GS
I
D
(V)
(A)
Conditions
I
see
I
V
100
S
S
Rev. 04 — 10 March 2011
4
GS
= 25 A; V
= 20 A; dI
Figure 17
= 0 V; V
GS
S
DS
/dt = -100 A/µs;
N-channel 30 V 4 mΩ logic level MOSFET in LFPAK
Fig 6.
Fig 8.
= 0 V; T
= 20 V
(A)
I
100
(S)
120
D
100
g
80
60
40
20
80
60
40
20
fs
0
0
j
function of drain-source voltage; typical values
drain current; typical values
Output characteristics: drain current as a
Forward transconductance as a function of
0
0
= 25 °C;
10
4.5
2
20
PSMN4R0-30YL
4
Min
-
-
-
V
GS
6
(V) = 3.2
40
Typ
0.83
39
36
2.2
2.8
2.6
2.4
3
© NXP B.V. 2011. All rights reserved.
I
8
D
003aac641
003aac644
(A)
V
DS
Max
1.2
-
-
(V)
10
60
Unit
V
ns
nC
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