PSMN4R0-40YS,115 NXP Semiconductors, PSMN4R0-40YS,115 Datasheet
PSMN4R0-40YS,115
Specifications of PSMN4R0-40YS,115
934063937115
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PSMN4R0-40YS,115 Summary of contents
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... PSMN4R0-40YS N-channel LFPAK 40 V 4.2 mΩ standard level MOSFET Rev. 02 — 12 July 2010 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment ...
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... drain-source I = 100 avalanche energy unclamped; R Simplified outline SOT669 (LFPAK) Description plastic single-ended surface-mounted package (LFPAK); 4 leads SOT669 All information provided in this document is subject to legal disclaimers. Rev. 02 — 12 July 2010 PSMN4R0-40YS Min = Figure 14 °C; - j(init) ≤ sup = 50 Ω GS Graphic symbol G mbb076 © ...
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... V; unclamped sup 003aad266 120 P der (%) 150 200 T (°C) mb Fig 2. Normalized total power dissipation as a function of mounting base temperature All information provided in this document is subject to legal disclaimers. Rev. 02 — 12 July 2010 PSMN4R0-40YS Min - = 20 kΩ -20 Figure 1 - Figure ° -55 - ° 100 Ω ...
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... Product data sheet N-channel LFPAK 40 V 4.2 mΩ standard level MOSFET Limit DSon DS D (1) 1 All information provided in this document is subject to legal disclaimers. Rev. 02 — 12 July 2010 PSMN4R0-40YS 003aad321 10μ s 100μ s 1ms DC 10ms 100ms 10 V (V) DS © NXP B.V. 2010. All rights reserved. ...
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... Transient thermal impedance from junction to mounting base as a function of pulse duration PSMN4R0-40YS Product data sheet N-channel LFPAK 40 V 4.2 mΩ standard level MOSFET Conditions see Figure All information provided in this document is subject to legal disclaimers. Rev. 02 — 12 July 2010 PSMN4R0-40YS Min Typ Max - 0.54 1.42 003aac657 t p δ ...
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... Figure see Figure see Figure 14; see Figure see Figure MHz °C; see Figure 0.8 Ω 4.7 Ω R G(ext) All information provided in this document is subject to legal disclaimers. Rev. 02 — 12 July 2010 PSMN4R0-40YS Min Typ Max Unit 4 µ µ 100 100 5.6 mΩ mΩ ...
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... V ( (V) DS Fig 6. 003aad159 (S) C iss rss (V) GS Fig 8. All information provided in this document is subject to legal disclaimers. Rev. 02 — 12 July 2010 PSMN4R0-40YS Min Typ - 0. 150 ° 175 ° ° Transfer characteristics: drain current as a function of gate-source voltage; typical values Forward transconductance as a function of drain current ...
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... T (°C) j Fig 12. Normalized drain-source on-state resistance factor as a function of junction temperature All information provided in this document is subject to legal disclaimers. Rev. 02 — 12 July 2010 PSMN4R0-40YS 03aa35 min typ max (V) GS 03aa27 0 60 120 180 ( ° C) ...
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... Fig 14. Gate charge waveform definitions 003aad157 (pF) 32V (nC) G Fig 16. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values All information provided in this document is subject to legal disclaimers. Rev. 02 — 12 July 2010 PSMN4R0-40YS GS(pl) V GS(th GS1 GS2 G(tot) 003aaa508 003aad158 ...
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... N-channel LFPAK 40 V 4.2 mΩ standard level MOSFET 100 150 ° 175 ° 0.3 0.6 All information provided in this document is subject to legal disclaimers. Rev. 02 — 12 July 2010 PSMN4R0-40YS 003aad156 = 25 ° 0.9 1.2 V (V) SD © NXP B.V. 2010. All rights reserved ...
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... D max 4.41 2.2 0.9 0.25 0.30 4.10 4.20 3.62 2.0 0.7 0.19 0.24 3.80 REFERENCES JEDEC JEITA MO-235 All information provided in this document is subject to legal disclaimers. Rev. 02 — 12 July 2010 PSMN4R0-40YS detail (1) (1) ( 5.0 3.3 6.2 0.85 1.3 1.27 4.8 3.1 5 ...
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... NXP Semiconductors 8. Revision history Table 7. Revision history Document ID Release date PSMN4R0-40YS v.2 20100712 • Modifications: Various changes to content. PSMN4R0-40YS v.1 20090625 PSMN4R0-40YS Product data sheet N-channel LFPAK 40 V 4.2 mΩ standard level MOSFET Data sheet status Change notice Product data sheet ...
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... Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. All information provided in this document is subject to legal disclaimers. Rev. 02 — 12 July 2010 PSMN4R0-40YS © NXP B.V. 2010. All rights reserved ...
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... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 02 — 12 July 2010 PSMN4R0-40YS Trademarks © NXP B.V. 2010. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 12 July 2010 Document identifier: PSMN4R0-40YS ...