PH8230E,115 NXP Semiconductors, PH8230E,115 Datasheet - Page 7
![MOSFET N-CH 30V 67A LFPAK](/photos/5/48/54859/568-lfpak-4_sot669_sml.jpg)
PH8230E,115
Manufacturer Part Number
PH8230E,115
Description
MOSFET N-CH 30V 67A LFPAK
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheet
1.PH8230E115.pdf
(12 pages)
Specifications of PH8230E,115
Package / Case
LFPak-4
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
8.2 mOhm @ 10A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
67A
Vgs(th) (max) @ Id
2.5V @ 1mA
Gate Charge (qg) @ Vgs
14nC @ 5V
Input Capacitance (ciss) @ Vds
1400pF @ 10V
Power - Max
62.5W
Mounting Type
Surface Mount
Minimum Operating Temperature
- 55 C
Configuration
Single Triple Source
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.0082 Ohm @ 10 V
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
67 A
Power Dissipation
62500 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
568-2350-2
934057745115
PH8230E T/R
934057745115
PH8230E T/R
NXP Semiconductors
PH8230E_4
Product data sheet
Fig 9.
Fig 11. Gate-source voltage as a function of gate
R
(mΩ)
V
DSon
(V)
GS
100
10
75
50
25
8
6
4
0
2
0
of drain current; typical values
charge; typical values
Drain-source on-state resistance as a function
0
0
2.9 V
3 V
2
3.1 V
10
4
3.2 V
6
V
20
GS
= 3.5 V
Q
10 V
8
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G
4 V
I
D
(nC)
(A)
Rev. 04 — 17 November 2009
10
30
Fig 10. Normalized drain-source on-state resistance
Fig 12. Input, output and reverse transfer capacitances
(pF)
a
C
10
10
10
1.5
0.5
2
1
0
4
3
2
10
−60
factor as a function of junction temperature
as a function of drain-source voltage; typical
values
−1
N-channel TrenchMOS logic level FET
0
1
60
10
120
PH8230E
V
© NXP B.V. 2009. All rights reserved.
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