STP14NM65N STMicroelectronics, STP14NM65N Datasheet - Page 14
![MOSFET N-CH 650V 12A TO-220](/photos/1/39/13943/to-220_sml.jpg)
STP14NM65N
Manufacturer Part Number
STP14NM65N
Description
MOSFET N-CH 650V 12A TO-220
Manufacturer
STMicroelectronics
Series
MDmesh™r
Datasheet
1.STB14NM65N.pdf
(18 pages)
Specifications of STP14NM65N
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
380 mOhm @ 6A, 10V
Drain To Source Voltage (vdss)
650V
Current - Continuous Drain (id) @ 25° C
12A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
45nC @ 10V
Input Capacitance (ciss) @ Vds
1300pF @ 50V
Power - Max
125W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.38 Ohms
Drain-source Breakdown Voltage
650 V
Gate-source Breakdown Voltage
+/- 25 V
Continuous Drain Current
12 A
Power Dissipation
125 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-7024-5
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
STP14NM65N
Manufacturer:
SANYO
Quantity:
45 000
Part Number:
STP14NM65N
Manufacturer:
ST
Quantity:
20 000
Package mechanical data
14/18
Dim
A1
D1
E1
V2
b2
e1
L1
L2
c2
J1
A
D
E
H
R
b
e
L
c
4.40
0.03
0.70
1.14
0.45
1.23
8.95
7.50
8.50
4.88
2.49
2.29
1.27
1.30
Min
10
15
0°
D²PAK (TO-263) mechanical data
2.54
mm
Typ
0.4
10.40
15.85
Max
4.60
0.23
0.93
1.70
0.60
1.36
9.35
5.28
2.69
2.79
1.40
1.75
8°
0.173
0.001
0.027
0.045
0.017
0.048
0.352
0.295
0.394
0.334
0.192
0.590
0.099
0.090
0.051
0.05
Min
0°
STB/F/I/P/W14NM65N
0.016
inch
Typ
0.1
0.009
0.067
0.053
0.208
0.106
0.069
0.181
0.037
0.024
0.368
0.409
0.624
0.110
0.055
Max
8°