STP14NM65N STMicroelectronics, STP14NM65N Datasheet - Page 3
![MOSFET N-CH 650V 12A TO-220](/photos/1/39/13943/to-220_sml.jpg)
STP14NM65N
Manufacturer Part Number
STP14NM65N
Description
MOSFET N-CH 650V 12A TO-220
Manufacturer
STMicroelectronics
Series
MDmesh™r
Datasheet
1.STB14NM65N.pdf
(18 pages)
Specifications of STP14NM65N
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
380 mOhm @ 6A, 10V
Drain To Source Voltage (vdss)
650V
Current - Continuous Drain (id) @ 25° C
12A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
45nC @ 10V
Input Capacitance (ciss) @ Vds
1300pF @ 50V
Power - Max
125W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.38 Ohms
Drain-source Breakdown Voltage
650 V
Gate-source Breakdown Voltage
+/- 25 V
Continuous Drain Current
12 A
Power Dissipation
125 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-7024-5
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
STP14NM65N
Manufacturer:
SANYO
Quantity:
45 000
Part Number:
STP14NM65N
Manufacturer:
ST
Quantity:
20 000
STB/F/I/P/W14NM65N
1
Electrical ratings
Table 2.
1. Limited only by maximum temperature allowed
2. Pulse width limited by safe operating area
3. I
Table 3.
Table 4.
Symbol
Symbol
Symbol
R
dv/dt
R
R
I
DM
P
V
thj-case
thj-amb
V
V
E
T
thj-pcb
I
SD
T
I
I
TOT
AS
T
ISO
GS
AS
DS
stg
D
D
J
l
(2)
≤ 12 A, di/dt ≤ 400 A/µs, V
(3)
Avalanche current, repetitive or not-
repetitive (pulse width limited by T
Single pulse avalanche energy
(starting T
Drain-source voltage (V
Gate-source voltage
Drain current (continuous) at T
Drain current (continuous) at T
Drain current (pulsed)
Total dissipation at T
Peak diode recovery voltage slope
Insulation withstand voltage (RMS) from all three
leads to external heat sink (t=1 s;T
Storage temperature
Max. operating junction temperature
Thermal resistance
junction-case max
Thermal resistance
junction-amb max
Thermal resistance
junction-pcb max
Maximum lead
temperature for soldering
purposes
Absolute maximum ratings
Thermal data
Avalanche characteristics
Parameter
J
=25 °C, I
Parameter
DD
Parameter
D
C
=80% V
=I
= 25 °C
AS
GS
, V
=0)
(BR)DSS
DD
TO-220
C
C
= 50 V)
--
= 25 °C
= 100 °C
J
C
62.5
max)
=25 °C)
I²PAK
--
1
D²PAK
30
TO-220, TO-247
Value
--
D²PAK, I²PAK
300
Max value
125
7.6
12
48
--
TO-247
-55 to 150
300
50
3
--
Value
± 25
650
150
15
TO-220FP
Electrical ratings
TO-220FP
7.6
62.5
2500
12
48
4.2
30
--
(1)
(1)
(1)
°C/W
°C/W
°C/W
Unit
Unit
V/ns
Unit
mJ
°C
°C
°C
W
A
V
A
A
A
V
V
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