STP14NM65N STMicroelectronics, STP14NM65N Datasheet - Page 5
![MOSFET N-CH 650V 12A TO-220](/photos/1/39/13943/to-220_sml.jpg)
STP14NM65N
Manufacturer Part Number
STP14NM65N
Description
MOSFET N-CH 650V 12A TO-220
Manufacturer
STMicroelectronics
Series
MDmesh™r
Datasheet
1.STB14NM65N.pdf
(18 pages)
Specifications of STP14NM65N
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
380 mOhm @ 6A, 10V
Drain To Source Voltage (vdss)
650V
Current - Continuous Drain (id) @ 25° C
12A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
45nC @ 10V
Input Capacitance (ciss) @ Vds
1300pF @ 50V
Power - Max
125W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.38 Ohms
Drain-source Breakdown Voltage
650 V
Gate-source Breakdown Voltage
+/- 25 V
Continuous Drain Current
12 A
Power Dissipation
125 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-7024-5
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
STP14NM65N
Manufacturer:
SANYO
Quantity:
45 000
Part Number:
STP14NM65N
Manufacturer:
ST
Quantity:
20 000
STB/F/I/P/W14NM65N
Table 7.
Table 8.
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300µs, duty cycle 1.5%
Symbol
Symbol
I
V
SDM
t
t
I
I
d(on)
d(off)
SD
RRM
RRM
I
Q
Q
t
SD
t
t
t
r
f
rr
rr
rr
rr
(2)
(1)
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Switching times
Source drain diode
Parameter
Parameter
V
R
(see Figure 18)
I
I
V
(see Figure 20)
I
V
(see Figure 20)
SD
SD
SD
DD
DD
DD
G
= 4.7 Ω V
= 12 A, V
= 12 A, di/dt = 100 A/µs
= 12 A, di/dt = 100 A/µs
=325 V, I
= 100 V
= 100 V, T
Test conditions
Test conditions
GS
GS
D
J
= 6 A
= 0
= 10 V
= 150 °C
Electrical characteristics
Min
Min
Typ
390
530
Typ
25
25
11
13
55
20
5
7
Max
Max Unit
1.3
12
48
Unit
µC
µC
ns
ns
ns
ns
ns
ns
A
A
V
A
A
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