STP14NM65N STMicroelectronics, STP14NM65N Datasheet - Page 7
![MOSFET N-CH 650V 12A TO-220](/photos/1/39/13943/to-220_sml.jpg)
STP14NM65N
Manufacturer Part Number
STP14NM65N
Description
MOSFET N-CH 650V 12A TO-220
Manufacturer
STMicroelectronics
Series
MDmesh™r
Datasheet
1.STB14NM65N.pdf
(18 pages)
Specifications of STP14NM65N
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
380 mOhm @ 6A, 10V
Drain To Source Voltage (vdss)
650V
Current - Continuous Drain (id) @ 25° C
12A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
45nC @ 10V
Input Capacitance (ciss) @ Vds
1300pF @ 50V
Power - Max
125W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.38 Ohms
Drain-source Breakdown Voltage
650 V
Gate-source Breakdown Voltage
+/- 25 V
Continuous Drain Current
12 A
Power Dissipation
125 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-7024-5
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
STP14NM65N
Manufacturer:
SANYO
Quantity:
45 000
Part Number:
STP14NM65N
Manufacturer:
ST
Quantity:
20 000
STB/F/I/P/W14NM65N
Figure 6.
Figure 8.
Figure 10. Transconductance
Safe operating area for TO-247
Output characteristics
Figure 7.
Figure 9.
Figure 11. Static drain-source on resistance
Thermal impedance for TO-247
Transfer characteristics
Electrical characteristics
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