STW7N95K3 STMicroelectronics, STW7N95K3 Datasheet - Page 8

• Manufacturer Part Number: STW7N95K3
• Description: MOSFET N-CH 950V 7.2A TO-247
• Manufacturer: STMicroelectronics
• Series: SuperMESH™r

Specifications of STW7N95K3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.35 Ohm @ 3.6A, 10V
• Drain To Source Voltage (vdss): 950V
• Current - Continuous Drain (id) @ 25° C: 7.2A
• Vgs(th) (max) @ Id: 5V @ 100µA
• Gate Charge (qg) @ Vgs: 34nC @ 10V
• Input Capacitance (ciss) @ Vds: 1031pF @ 100V
• Power - Max: 150W
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.35 Ohms
• Drain-source Breakdown Voltage: 950 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 7.2 A
• Power Dissipation: 150 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-8798-5

Electrical characteristics
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Figure 14. Output capacitance stored energy
Figure 16. Source-drain diode forward
Figure 18. Maximum avalanche energy vs
E
Coss
(µJ)
(V)
(mJ)
V
E
160
140
180
120
100
12
10
0.8
0.7
220
200
14
0.6
0.5
0.9
SD
AS
60
40
20
80
6
8
4
0
2
0
0
1
0
characteristics
temperature
T
J
2
20
=-50°C
200
3
40
400
4
60
5
80
600
I
D
=9 A
6
100
T
J
T
=150°C
7
800
120 140
J
=25°C
8
AM01587v1
AM01588v1
AM03244v1
V
I
SD
DS
T
(A)
J
(V)
(°C)
Figure 15. Normalized on resistance vs
Figure 17. Normalized gate threshold voltage
(norm)
(norm)
V
R
GS(th)
DS(on)
1.2
1.1
1.0
0.8
0.7
0.6
0.9
0.5
0.4
3.0
2.5
2.0
1.5
1.0
0.5
0
STF7N95K3, STP7N95K3, STW7N95K3
-50
temperature
vs temperature
-50
0
0
50
50
100
100
150
T
J
(°C)
AM01582v1
T
AM01585v1
J
(°C)