SSM6J53FE(TE85L,F) Toshiba, SSM6J53FE(TE85L,F) Datasheet - Page 2

• Manufacturer Part Number: SSM6J53FE(TE85L,F)
• Description: MOSFET P-CH 20V 1.8A ES6
• Manufacturer: Toshiba

Specifications of SSM6J53FE(TE85L,F)

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 136 mOhm @ 1A, 2.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 1.8A
• Vgs(th) (max) @ Id: 1V @ 1mA
• Gate Charge (qg) @ Vgs: 10.6nC @ 4V
• Input Capacitance (ciss) @ Vds: 568pF @ 10V
• Power - Max: 500mW
• Mounting Type: Surface Mount
• Package / Case: ES6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SSM6J53FE(TE85LF)TR

Switching Time Test Circuit
Marking
Precaution
for this product. For normal switching operation, V
lower voltage than V
Handling Precaution
protected against static electricity. Operators should wear anti-static clothing, and containers and other objects that come
into direct contact with devices should be made of anti-static materials.
V
Be sure to take this into consideration when using the device.
When handling individual devices (which are not yet mounted on a circuit board), ensure that the environment is
(a) Test Circuit
th
−
2.5V
can be expressed as the voltage between the gate and source when the low operating current value is I
0
6
1
10 μs
KG
V
R
D.U. < = 1%
V
Common Source
Ta = 25°C
5
2
DD
IN
G
: t
= 4.7 Ω
= -10 V
r
, t
th
f
4
3
< 5 ns
. (The relationship can be established as follows: V
IN
R
V
OUT
L
DD
GS (on)
Equivalent Circuit (top view)
(b) V
(c) V
requires a higher voltage than V
2
OUT
IN
6
1
V
5
2
V
DD
DS (ON)
GS (off)
−2.5 V
0 V
4
3
< V
th
< V
t
on
10%
th
GS (on).
t
and V
r
90%
10%
)
GS (off)
t
90%
SSM6J53FE
off
requires a
2007-11-01
t
f
D
= -1mA