SSM6J53FE(TE85L,F) Toshiba, SSM6J53FE(TE85L,F) Datasheet - Page 5

• Manufacturer Part Number: SSM6J53FE(TE85L,F)
• Description: MOSFET P-CH 20V 1.8A ES6
• Manufacturer: Toshiba

Specifications of SSM6J53FE(TE85L,F)

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 136 mOhm @ 1A, 2.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 1.8A
• Vgs(th) (max) @ Id: 1V @ 1mA
• Gate Charge (qg) @ Vgs: 10.6nC @ 4V
• Input Capacitance (ciss) @ Vds: 568pF @ 10V
• Power - Max: 500mW
• Mounting Type: Surface Mount
• Package / Case: ES6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SSM6J53FE(TE85LF)TR

-0.003
-0.001
-0.03
-0.01
-0.4
-0.1
-10
-3
-1
-0.1
I D max (Pulsed) *
I D max (Continuous)
Mounted on FR4 board
(25.4 mm × 25.4 mm × 1.6 t
Cu pad: 645 mm
* Single Non-repetitive Pulse
Ta = 25°C
Curves must be derated
linearly
temperature.
-0.3
Drain-Source voltage V
DC operation
Ta = 25°C
with
1000
100
Safe operating area
10
0.001
increase
2
1
-1
)
Single Pulse
Mounted on FR4 board
(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm
-3
in
10s*
0.01
10 ms*
-10
DS
1 ms*
(V)
-30
0.1
-100
Pulse width t
5
2
r
)
th
– t
1
w
w
600
500
400
300
200
100
(s)
0
0
10
Ambient temperature Ta (°C)
50
100
P
D
– Ta
Mounted on FR4 board
(25.4 mm × 25.4 mm × 1.6 t,
Cu Pad: 645 mm
1000
100
SSM6J53FE
2007-11-01
2
)
150