NTA4001NT1G ON Semiconductor, NTA4001NT1G Datasheet

NTA4001NT1G

Manufacturer Part Number

NTA4001NT1G

Description

MOSFET N-CH 20V 238MA SOT-416

Manufacturer

ON Semiconductor

Datasheet

1.NTA4001NT1G.pdf (5 pages)

Specifications of NTA4001NT1G

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

3 Ohm @ 10mA, 4.5V

Drain To Source Voltage (vdss)

20V

Current - Continuous Drain (id) @ 25° C

238mA

Vgs(th) (max) @ Id

1.5V @ 100µA

Input Capacitance (ciss) @ Vds

20pF @ 5V

Power - Max

300mW

Mounting Type

Surface Mount

Package / Case

SC-75-3, SOT-416, EMT3, 3-SSMini

Configuration

Single

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

3 Ohm @ 4.5 V

Forward Transconductance Gfs (max / Min)

0.08 S

Drain-source Breakdown Voltage

20 V

Gate-source Breakdown Voltage

+/- 10 V

Continuous Drain Current

0.238 A

Power Dissipation

300 mW

Maximum Operating Temperature

+ 175 C

Mounting Style

SMD/SMT

Minimum Operating Temperature

- 55 C

05+

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Gate Charge (qg) @ Vgs

Lead Free Status / Rohs Status

Lead free / RoHS Compliant

Other names

NTA4001NT1GOSTR

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Download datasheet (82Kb)

NTA4001N

Small Signal MOSFET

20 V, 238 mA, Single, N-Channel, Gate

ESD Protection, SC-75

Features

•

Applications

•

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Surface-mounted on FR4 board using 1 in sq. pad size (Cu area = 1.127 in sq.

November, 2007 - Rev. 1

MAXIMUM RATINGS

THERMAL RESISTANCE RATINGS

Drain-to-Source Voltage

Gate-to-Source Voltage

Continuous Drain

Current (Note 1)

Power Dissipation

(Note 1)

Pulsed Drain Current

Operating Junction and Storage Temperature

Continuous Source Current (Body Diode)

Lead Temperature for Soldering Purposes

(1/8” from case for 10 s)

Junction-to-Ambient – Steady State (Note 1)

Digital Cameras, PDA's, Video Games, Hand Held Computers, etc.

Low Gate Charge for Fast Switching

Small 1.6 x 1.6 mm Footprint

ESD Protected Gate

Pb-Free Package is Available

Power Management Load Switch

Level Shift

Portable Applications such as Cell Phones, Media Players,

[1 oz] including traces).

Parameter

Steady State = 25°C

= 25°C unless otherwise stated)

v 10 ms

Symbol

DSS

STG

qJA

-55 to

Value

Max

±10

238

300

714

150

238

260

416

°C/W

Unit

°C

†For information on tape and reel specifications,

NTA4001NT1

NTA4001NT1G

SC-75 / SOT-416

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

Source

(BR)DSS

Device

Gate

CASE 463

20 V

STYLE 5

(Note: Microdot may be in either location)

ORDERING INFORMATION

PIN CONNECTIONS

http://onsemi.com

= Specific Device Code

= Date Code

= Pb-Free Package

SC-75 (3-Leads)

(Pb-Free)

Package

1.5 W @ 4.5 V

2.2 W @ 2.5 V

SC-75

Typ @ V

N-Channel

(Top View)

DS(on)

MARKING DIAGRAM

Publication Order Number:

3000 Tape & Reel

TF MG

Shipping†

NTA4001N/D

(Note 1)

238 mA

MAX

Drain

Related parts for NTA4001NT1G

NTA4001NT1G Summary of contents

Page 1

... SC-75 / SOT-416 CASE 463 STYLE 5 Symbol Max Unit °C/W R 416 qJA Device NTA4001NT1 NTA4001NT1G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. 1 http://onsemi.com R I MAX DS(on) D ...

Page 2

ELECTRICAL CHARACTERISTICS Parameter OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-to-Source Leakage Current ON CHARACTERISTICS (Note 2) Gate Threshold Voltage Drain-to-Source On Resistance Forward Transconductance CAPACITANCES Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS (Note 3) ...

Page 3

TYPICAL PERFORMANCE CURVES 0. 0.1 0.08 . 0.06 0. 1 ...

Page 4

Ciss 20 Crss VDS = VDS V GS GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (V) Figure 7. Capacitance Variation 0 0.08 ...

Page 5

... *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “ ...

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