NTA4001NT1G ON Semiconductor, NTA4001NT1G Datasheet - Page 4

• Manufacturer Part Number: NTA4001NT1G
• Description: MOSFET N-CH 20V 238MA SOT-416
• Manufacturer: ON Semiconductor

Specifications of NTA4001NT1G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 3 Ohm @ 10mA, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 238mA
• Vgs(th) (max) @ Id: 1.5V @ 100µA
• Input Capacitance (ciss) @ Vds: 20pF @ 5V
• Power - Max: 300mW
• Mounting Type: Surface Mount
• Package / Case: SC-75-3, SOT-416, EMT3, 3-SSMini
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 3 Ohm @ 4.5 V
• Forward Transconductance Gfs (max / Min): 0.08 S
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 10 V
• Continuous Drain Current: 0.238 A
• Power Dissipation: 300 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Dc: 05+
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: NTA4001NT1GOSTR

25
20
15
10
5
0
10
Ciss
Crss
GATE-TO-SOURCE OR DRAIN-TO-SOURCE
VDS = 0 V V
5
Figure 7. Capacitance Variation
V
GS
0
VDS
VOLTAGE (V)
GS
= 0 V
0.08
0.06
0.04
0.02
5
0.1
0
0.5
V
T
10
GS
J
TYPICAL PERFORMANCE CURVES
= 25°C
V
= 0 V
0.55
SD
Figure 9. Diode Forward Voltage
, SOURCE-TO-DRAIN VOLTAGE (V)
T
J
15
= 25°C
Coss
Crss
Ciss
0.6
http://onsemi.com
versus Current
NTA4001N
20
0.65
4
1000
100
10
1
0.7
1
V
I
V
D
Figure 8. Resistive Switching Time Variation
DD
GS
= 10 mA
= 5 V
= 4.5 V
t
t
0.75
d(off)
d(on)
t
t
r
f
R
versus Gate Resistance
G
, GATE RESISTANCE (W)
0.8
10
100