NTA4001NT1G ON Semiconductor, NTA4001NT1G Datasheet - Page 3

• Manufacturer Part Number: NTA4001NT1G
• Description: MOSFET N-CH 20V 238MA SOT-416
• Manufacturer: ON Semiconductor

Specifications of NTA4001NT1G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 3 Ohm @ 10mA, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 238mA
• Vgs(th) (max) @ Id: 1.5V @ 100µA
• Input Capacitance (ciss) @ Vds: 20pF @ 5V
• Power - Max: 300mW
• Mounting Type: Surface Mount
• Package / Case: SC-75-3, SOT-416, EMT3, 3-SSMini
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 3 Ohm @ 4.5 V
• Forward Transconductance Gfs (max / Min): 0.08 S
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 10 V
• Continuous Drain Current: 0.238 A
• Power Dissipation: 300 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Dc: 05+
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: NTA4001NT1GOSTR

0.18
0.16
0.14
0.12
0.08
0.06
0.04
0.02
0.2
0.1
2.5
1.5
0.5
1.8
1.6
1.4
1.2
0.8
0.6
0.4
0.2
0
2
1
2
1
0
-50
0
0
Figure 3. On-resistance versus Drain Current
V
V
I
GS
D
GS
= 0.01 A
Figure 5. On-resistance Variation with
-25
= 4.5 V
Figure 1. On-region Characteristics
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
= 4.5 V
0.4
T
J
, JUNCTION TEMPERATURE (°C)
0.05
0
I
D
V
V
V
, DRAIN CURRENT (A)
and Temperature
GS
GS
GS
V
25
GS
Temperature
0.8
= 2.8 V
= 2.4 V
= 10 V
T
T
J
T
= 5 V
J
J
= 25°C
V
= 125°C
= -55°C
.
GS
50
0.1
= 1.2 V
1.2
75
TYPICAL PERFORMANCE CURVES
V
GS
100
0.15
V
= 2 V
GS
1.6
T
J
= 1.4 V
http://onsemi.com
= 25°C
125
NTA4001N
150
0.2
2
3
1000
0.16
0.12
0.08
0.04
100
0.2
2.5
1.5
0.5
10
0
2
1
1
0.6
0
0
Figure 4. On-resistance versus Drain Current
T
Figure 6. Drain-to-Source Leakage Current
VDS = 5 V
J
V
= 25°C
GS
Figure 2. Transfer Characteristics
0.8
V
= 0 V
V
DS
GS
, DRAIN-TO-SOURCE VOLTAGE (V)
, GATE-TO-SOURCE VOLTAGE (V)
0.05
V
5
1
V
GS
I
D
GS
, DRAIN CURRENT (A)
and Gate Voltage
= 2.5 V
versus Voltage
= 4.5 V
1.2
T
T
T
J
J
J
= 125°C
= 150°C
= 125°C
0.1
10
1.4
1.6
0.15
15
T
J
1.8
= -55°C
T
J
= 25°C
2
0.2
20