NTA4001NT1G ON Semiconductor, NTA4001NT1G Datasheet - Page 2

• Manufacturer Part Number: NTA4001NT1G
• Description: MOSFET N-CH 20V 238MA SOT-416
• Manufacturer: ON Semiconductor

Specifications of NTA4001NT1G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 3 Ohm @ 10mA, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 238mA
• Vgs(th) (max) @ Id: 1.5V @ 100µA
• Input Capacitance (ciss) @ Vds: 20pF @ 5V
• Power - Max: 300mW
• Mounting Type: Surface Mount
• Package / Case: SC-75-3, SOT-416, EMT3, 3-SSMini
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 3 Ohm @ 4.5 V
• Forward Transconductance Gfs (max / Min): 0.08 S
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 10 V
• Continuous Drain Current: 0.238 A
• Power Dissipation: 300 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Dc: 05+
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: NTA4001NT1GOSTR

2. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
3. Switching characteristics are independent of operating junction temperatures.
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 2)
CAPACITANCES
SWITCHING CHARACTERISTICS (Note 3)
DRAIN-SOURCE DIODE CHARACTERISTICS
Drain-to-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-to-Source Leakage Current
Gate Threshold Voltage
Drain-to-Source On Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Forward Diode Voltage
Parameter
(T
J
= 25°C unless otherwise specified)
http://onsemi.com
NTA4001N
V
Symbol
V
R
t
(BR)DSS
C
C
t
d(OFF)
GS(TH)
I
I
C
d(ON)
DS(on)
V
g
DSS
GSS
OSS
RSS
ISS
FS
t
t
SD
r
f
2
V
V
V
V
V
V
I
V
V
V
V
D
GS
GS
DS
GS
GS
DS
GS
DS
GS
DS
= 10 mA, R
Test Condition
= 4.5 V, I
= 2.5 V, I
= 0 V, V
= 4.5 V, V
= 3 V, I
= 0 V, I
= 0 V, V
= 3 V, I
= 0 V, I
= 5 V, f = 1 MHz,
V
GS
= 0 V
D
D
D
GS
S
DS
D
D
= 100 mA
= 100 mA
G
= 10 mA
= 10 mA
DS
= 10 mA
= 10 mA
= ±10 V
= 10 W
= 20 V
= 5 V,
Min
0.5
20
11.5
0.66
Typ
1.0
1.5
2.2
3.5
80
10
13
15
98
60
±100
Max
1.0
1.5
3.0
3.5
6.0
0.8
20
15
Unit
mS
mA
mA
pF
ns
ns
V
V
W
V