NTZS3151PT1G ON Semiconductor, NTZS3151PT1G Datasheet
NTZS3151PT1G
Specifications of NTZS3151PT1G
Available stocks
Related parts for NTZS3151PT1G
NTZS3151PT1G Summary of contents
Page 1
NTZS3151P Small Signal MOSFET −20 V, −950 mA, P−Channel SOT−563 Features • Low R Improving System Efficiency DS(on) • Low Threshold Voltage • Small Footprint 1.6 x 1.6 mm • These are Pb−Free Devices Applications • Load/Power Switches • Battery ...
Page 2
ELECTRICAL CHARACTERISTICS Parameter OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage Drain−to−Source Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate−to−Source Leakage Current ON CHARACTERISTICS (Note 2) Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain−to−Source On Resistance Forward Transconductance CHARGES AND CAPACITANCES ...
Page 3
TYPICAL PERFORMANCE CURVES 4 3 − 25° − 2.5 2 1 0.5 1 1.5 2 2.5 3 −V , DRAIN−TO−SOURCE VOLTAGE (VOLTS) DS Figure ...
Page 4
... GATE RESISTANCE (W) G Figure 9. Resistive Switching Time Variation vs. Gate Resistance ORDERING INFORMATION Device NTZS3151PT1G NTZS3151PT5G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifi- cations Brochure, BRD8011/ 25°C unless otherwise noted) ...
Page 5
... Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein ...