NTZS3151PT1G ON Semiconductor, NTZS3151PT1G Datasheet - Page 3

• Manufacturer Part Number: NTZS3151PT1G
• Description: MOSFET P-CH 20V 860MA SOT-563
• Manufacturer: ON Semiconductor

Specifications of NTZS3151PT1G

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 150 mOhm @ 950mA, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 860mA
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 5.6nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 458pF @ 16V
• Power - Max: 170mW
• Mounting Type: Surface Mount
• Package / Case: SOT-563, SOT-6
• Configuration: Single Quad Drain
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.15 Ohm @ 4.5 V
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 0.86 A
• Power Dissipation: 170 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NTZS3151PT1GOSTR

3.5
2.5
1.5
0.5
0.3
0.2
0.1
4
3
2
1
0
0
1.8
1.6
1.4
1.2
0.8
0.6
0
0
Figure 3. On−Resistance vs. Drain Current and
1
−50
V
0.5
−V
GS
I
V
D
GS
Figure 1. On−Region Characteristics
DS
= −0.95 A
= −4.5 V
−25
Figure 5. On−Resistance Variation with
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
= −4.5 V
1
−I
T
1
V
V
J
1.5
D,
, JUNCTION TEMPERATURE (°C)
GS
GS
0
DRAIN CURRENT (AMPS)
= −2 V
= −3 V
TYPICAL PERFORMANCE CURVES
Temperature
2
25
T
T
T
Temperature
J
J
J
2.5
= 125°C
= −55°C
= 25°C
2
50
3
T
J
= 25°C
75
3.5
3
100
4
−1.8 V
−1.6 V
−1.4 V
−1.2 V
4.5
−1 V
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125
5
4
150
3
10000
1000
100
0.3
0.2
0.1
3.5
2.5
1.5
0.5
(T
0
4
3
2
1
0
J
0
Figure 4. On−Resistance vs. Drain Current and
0
0
= 25°C unless otherwise noted)
T
V
Figure 6. Drain−to−Source Leakage Current
J
V
GS
= 25°C
DS
−V
−V
0.5
= 0 V
DS
≥ −10 V
GS
0.5
Figure 2. Transfer Characteristics
, GATE−TO−SOURCE VOLTAGE (VOLTS)
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
T
−I
25°C
V
J
D,
GS
1
5
= −55°C
DRAIN CURRENT (AMPS)
= −1.8 V
1
V
V
Gate Voltage
1.5
GS
GS
vs. Voltage
T
T
125°C
= −2.5 V
= −4.5 V
J
J
= 150°C
= 125°C
1.5
10
2
2.5
2
15
3
2.5
3.5
20
3
4