NTZS3151PT1G ON Semiconductor, NTZS3151PT1G Datasheet - Page 3
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NTZS3151PT1G
Manufacturer Part Number
NTZS3151PT1G
Description
MOSFET P-CH 20V 860MA SOT-563
Manufacturer
ON Semiconductor
Datasheet
1.NTZS3151PT1G.pdf
(5 pages)
Specifications of NTZS3151PT1G
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
150 mOhm @ 950mA, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
860mA
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
5.6nC @ 4.5V
Input Capacitance (ciss) @ Vds
458pF @ 16V
Power - Max
170mW
Mounting Type
Surface Mount
Package / Case
SOT-563, SOT-6
Configuration
Single Quad Drain
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.15 Ohm @ 4.5 V
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
0.86 A
Power Dissipation
170 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
NTZS3151PT1GOSTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
NTZS3151PT1G
Manufacturer:
ON
Quantity:
242
Company:
Part Number:
NTZS3151PT1G
Manufacturer:
ON
Quantity:
30 000
Part Number:
NTZS3151PT1G
Manufacturer:
ON/安森美
Quantity:
20 000
3.5
2.5
1.5
0.5
0.3
0.2
0.1
4
3
2
1
0
0
1.8
1.6
1.4
1.2
0.8
0.6
0
0
Figure 3. On−Resistance vs. Drain Current and
1
−50
V
0.5
−V
GS
I
V
D
GS
Figure 1. On−Region Characteristics
DS
= −0.95 A
= −4.5 V
−25
Figure 5. On−Resistance Variation with
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
= −4.5 V
1
−I
T
1
V
V
J
1.5
D,
, JUNCTION TEMPERATURE (°C)
GS
GS
0
DRAIN CURRENT (AMPS)
= −2 V
= −3 V
TYPICAL PERFORMANCE CURVES
Temperature
2
25
T
T
T
Temperature
J
J
J
2.5
= 125°C
= −55°C
= 25°C
2
50
3
T
J
= 25°C
75
3.5
3
100
4
−1.8 V
−1.6 V
−1.4 V
−1.2 V
4.5
−1 V
http://onsemi.com
125
5
4
150
3
10000
1000
100
0.3
0.2
0.1
3.5
2.5
1.5
0.5
(T
0
4
3
2
1
0
J
0
Figure 4. On−Resistance vs. Drain Current and
0
0
= 25°C unless otherwise noted)
T
V
Figure 6. Drain−to−Source Leakage Current
J
V
GS
= 25°C
DS
−V
−V
0.5
= 0 V
DS
≥ −10 V
GS
0.5
Figure 2. Transfer Characteristics
, GATE−TO−SOURCE VOLTAGE (VOLTS)
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
T
−I
25°C
V
J
D,
GS
1
5
= −55°C
DRAIN CURRENT (AMPS)
= −1.8 V
1
V
V
Gate Voltage
1.5
GS
GS
vs. Voltage
T
T
125°C
= −2.5 V
= −4.5 V
J
J
= 150°C
= 125°C
1.5
10
2
2.5
2
15
3
2.5
3.5
20
3
4