NTZS3151PT1G ON Semiconductor, NTZS3151PT1G Datasheet - Page 5

• Manufacturer Part Number: NTZS3151PT1G
• Description: MOSFET P-CH 20V 860MA SOT-563
• Manufacturer: ON Semiconductor

Specifications of NTZS3151PT1G

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 150 mOhm @ 950mA, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 860mA
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 5.6nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 458pF @ 16V
• Power - Max: 170mW
• Mounting Type: Surface Mount
• Package / Case: SOT-563, SOT-6
• Configuration: Single Quad Drain
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.15 Ohm @ 4.5 V
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 0.86 A
• Power Dissipation: 170 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NTZS3151PT1GOSTR

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6
1
e
−X−
D
5
2
4
3
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
b
0.08 (0.003)
−Y−
6 5 PL
E
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
M
X
Y
0.0531
1.35
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Japan: ON Semiconductor, Japan Customer Focus Center
2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051
Phone: 81−3−5773−3850
PACKAGE DIMENSIONS
SOLDERING FOOTPRINT*
A
http://onsemi.com
SOT−563, 6 LEAD
CASE 463A−01
H
0.0197
C
L
ISSUE F
E
0.0118
0.5
0.3
0.0394
1.0
5
0.0197
0.5
SCALE 20:1
0.0177
0.45
NOTES:
inches
1. DIMENSIONING AND TOLERANCING PER ANSI
2. CONTROLLING DIMENSION: MILLIMETERS
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
mm
Y14.5M, 1982.
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE MATERIAL.
DIM
H
A
b
C
D
E
e
L
E
MIN
0.50
0.17
0.08
1.50
1.10
0.10
1.50
MILLIMETERS
0.5 BSC
ON Semiconductor Website: http://onsemi.com
Order Literature: http://www.onsemi.com/litorder
For additional information, please contact your
local Sales Representative.
NOM
0.55
0.22
0.12
1.60
1.20
0.20
1.60
MAX
0.60
0.27
0.18
1.70
1.30
0.30
1.70
0.020
0.007
0.003
0.059
0.043
0.004
0.059
MIN
0.02 BSC
INCHES
0.021
0.009
0.005
0.062
0.047
0.008
0.062
NOM
NTZS3151P/D
0.023
0.007
0.066
0.051
0.012
0.066
0.011
MAX