NTZS3151PT1G ON Semiconductor, NTZS3151PT1G Datasheet - Page 4

• Manufacturer Part Number: NTZS3151PT1G
• Description: MOSFET P-CH 20V 860MA SOT-563
• Manufacturer: ON Semiconductor

Specifications of NTZS3151PT1G

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 150 mOhm @ 950mA, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 860mA
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 5.6nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 458pF @ 16V
• Power - Max: 170mW
• Mounting Type: Surface Mount
• Package / Case: SOT-563, SOT-6
• Configuration: Single Quad Drain
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.15 Ohm @ 4.5 V
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 0.86 A
• Power Dissipation: 170 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NTZS3151PT1GOSTR

ORDERING INFORMATION
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifi-
NTZS3151PT1G
NTZS3151PT5G
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)
1000
1000
cations Brochure, BRD8011/D.
900
800
700
600
500
400
300
200
100
100
10
0
1
10
1
Figure 9. Resistive Switching Time Variation
V
I
V
D
DD
GS
C
V
= −0.95 A
Device
RSS
DS
= −25 V
= −4.5 V
5
t
t
= 0 V
d(on)
d(off)
−V
t
t
Figure 7. Capacitance Variation
r
f
GS
R
vs. Gate Resistance
0
G
−V
, GATE RESISTANCE (W)
V
GS
TYPICAL PERFORMANCE CURVES
DS
C
OSS
= 0 V
5
10
10
15
(Pb−Free)
(Pb−Free)
SOT−563
SOT−563
Package
T
J
20
= 25°C
http://onsemi.com
C
ISS
100
25
4
5
4
3
2
1
0
0
1.2
1.0
0.8
0.6
0.4
0.2
(T
0
0.1
Q
J
GS
= 25°C unless otherwise noted)
V
T
Drain−to−Source Voltage vs. Total Charge
Figure 10. Diode Forward Voltage vs. Current
GS
J
−V
1
= 25°C
0.2
= 0 V
SD
Q
Q
−V
Figure 8. Gate−to−Source and
, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
G
GD
, TOTAL GATE CHARGE (nC)
DS
0.3
2
4000 / Tape & Reel
8000 / Tape & Reel
0.4
QT
Shipping
3
0.5
4
0.6
I
T
D
J
0.7
= −0.77 A
= 25°C
5
−V
GS
0.8
6
30
25
20
15
10
5
0
0.9