IPB80N04S3-06 Infineon Technologies, IPB80N04S3-06 Datasheet
IPB80N04S3-06
Specifications of IPB80N04S3-06
IPB80N04S3-06TR
SP000254822
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IPB80N04S3-06 Summary of contents
Page 1
... Product Summary DS(on),max I D PG-TO263-3-2 Marking 3N0406 3N0406 3N0406 Symbol Conditions =25°C, V =10V =100 ° = =25 °C D,pulse = =25 °C tot stg page 1 IPB80N04S3-06 IPI80N04S3-06, IPP80N04S3-06 40 (SMD version) 5.4 80 PG-TO262-3-1 PG-TO220-3-1 Value Unit 320 125 mJ ±20 V 100 W -55 ... +175 °C 55/175/56 2007-05- ...
Page 2
... (BR)DSS =52 µA GS(th = DSS T =25 ° = =125 ° = GSS = =80 A DS( SMD version page 2 IPB80N04S3-06 IPI80N04S3-06, IPP80N04S3-06 Values min. typ. max 1 2.1 3.0 4 100 = 100 - 4.6 5.7 - 4.3 5.4 Unit K µA nA mΩ 2007-05-03 ...
Page 3
... plateau =25 ° S,pulse = =25 ° = /dt =100 A/µ 1.5K/W the chip is able to carry 100A at 25°C. For detailed thJC 2 (one layer, 70 µm thick) copper area for drain page 3 IPB80N04S3-06 IPI80N04S3-06, IPP80N04S3-06 Values min. typ. max. - 2500 3250 = 660 - 100 - = 6 Unit pF 860 130 ...
Page 4
... V DS Rev. 1.1 2 Drain current 100 150 200 4 Max. transient thermal impedance Z = f(t thJC parameter µs 10 µ 100 µ 100 [V] page 4 IPB80N04S3-06 IPI80N04S3-06, IPP80N04S3- ≥ 100 150 T [° 0.5 0.1 0.05 0.01 single pulse - [s] p 200 - 2007-05-03 ...
Page 5
... V GS Rev. 1.1 6 Typ. drain-source on-state resistance R = f(I DS(on) parameter 6 5 [V] 8 Typ. drain-source on-state resistance R = f(T DS(on) 9 -55 °C 25 °C 8 175 ° -60 [V] page 5 IPB80N04S3-06 IPI80N04S3-06, IPP80N04S3- °C; SMD 5 [ SMD - 100 T [° 6 100 120 140 180 2007-05-03 ...
Page 6
... V SD Rev. 1.1 10 Typ. capacitances 520 µ 100 140 180 12 Typ. avalanche characteristics parameter: T 100 10 25 °C 1 0.8 1 1.2 1.4 [V] page 6 IPB80N04S3-06 IPI80N04S3-06, IPP80N04S3- MHz [ j(start) 25 °C 100 °C 150 ° 100 t [µs] AV Ciss Coss Crss 25 30 1000 2007-05-03 ...
Page 7
... A 400 300 40 A 200 100 [° Typ. gate charge pulsed GS gate D parameter gate Rev. 1.1 14 Typ. drain-source breakdown voltage V BR(DSS 125 175 16 Gate charge waveforms s(th (th [nC] page 7 IPB80N04S3-06 IPI80N04S3-06, IPP80N04S3- -60 - 100 T [° 140 180 Q gate 2007-05-03 ...
Page 8
... Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.1 IPI80N04S3-06, IPP80N04S3-06 page 8 IPB80N04S3-06 2007-05-03 ...
Page 9
... QGD max from 13nC to 16nC page 9 IPB80N04S3-06 IPI80N04S3-06, IPP80N04S3-06 Changes RthJC from 1.7K/W to 1.5K/W RDSon max IPB from 5.8mOhm to 5.4mOhm RDSon max IPP/I from 6.1mOhm to 5.7mOhm Update of diagrams involving RthJC and RDSon_max ...