IPB80N04S3-06 Infineon Technologies, IPB80N04S3-06 Datasheet - Page 6

• Manufacturer Part Number: IPB80N04S3-06
• Description: MOSFET N-CH 40V 80A TO263-3
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of IPB80N04S3-06

• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 5.4 mOhm @ 80A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 80A
• Vgs(th) (max) @ Id: 4V @ 52µA
• Gate Charge (qg) @ Vgs: 47nC @ 10V
• Input Capacitance (ciss) @ Vds: 3250pF @ 25V
• Power - Max: 100W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 5.8 m Ohms
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: 2.1 V
• Continuous Drain Current: 80 A
• Power Dissipation: 88 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: IPB80N04S3-06; IPB80N04S3-06TR; SP000254822

Rev. 1.1
9 Typ. gate threshold voltage
V
parameter: I
11 Typical forward diode characteristicis
IF = f(V
parameter: T
GS(th)
10
10
10
10
3.5
2.5
1.5
= f(T
4
3
2
1
3
2
1
0
SD
-60
0
)
j
); V
D
j
0.2
-20
GS
= V
0.4
20
DS
175 °C
52 µA
0.6
V
T
SD
j
60
[°C]
[V]
25 °C
0.8
520 µA
100
1
140
1.2
180
1.4
page 6
10 Typ. capacitances
C = f(V
12 Typ. avalanche characteristics
I
parameter: T
A S
= f(t
100
10
10
10
10
10
1
4
3
2
1
AV
DS
1
0
)
); V
j(start)
GS
5
= 0 V; f = 1 MHz
IPI80N04S3-06, IPP80N04S3-06
10
10
150 °C
t
V
AV
DS
15
[µs]
[V]
100 °C
IPB80N04S3-06
100
20
25 °C
25
2007-05-03
Ciss
Coss
Crss
1000
30