IPB80N04S3-06 Infineon Technologies, IPB80N04S3-06 Datasheet - Page 7

• Manufacturer Part Number: IPB80N04S3-06
• Description: MOSFET N-CH 40V 80A TO263-3
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of IPB80N04S3-06

• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 5.4 mOhm @ 80A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 80A
• Vgs(th) (max) @ Id: 4V @ 52µA
• Gate Charge (qg) @ Vgs: 47nC @ 10V
• Input Capacitance (ciss) @ Vds: 3250pF @ 25V
• Power - Max: 100W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 5.8 m Ohms
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: 2.1 V
• Continuous Drain Current: 80 A
• Power Dissipation: 88 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: IPB80N04S3-06; IPB80N04S3-06TR; SP000254822

Rev. 1.1
13 Typical avalanche energy
E
parameter: I
15 Typ. gate charge
V
parameter: V
AS
GS
= f(T
= f(Q
600
500
400
300
200
100
12
10
0
8
6
4
2
0
25
0
j
)
gate
D
80 A
); I
20 A
40 A
DD
D
= 80 A pulsed
10
75
Q
T
gate
j
20
[°C]
[nC]
125
8 V
30
32 V
175
40
page 7
14 Typ. drain-source breakdown voltage
V
16 Gate charge waveforms
BR(DSS)
Q
V
55
50
45
40
35
30
V
g (th)
g s(th)
-60
GS
= f(T
j
); I
Q
-20
g s
IPI80N04S3-06, IPP80N04S3-06
D
= 1 mA
20
Q
T
g
j
Q
60
[°C]
sw
Q
g d
IPB80N04S3-06
100
140
2007-05-03
Q
gate
180