FDFS2P753Z Fairchild Semiconductor, FDFS2P753Z Datasheet - Page 2

• Manufacturer Part Number: FDFS2P753Z
• Description: MOSFET P-CH 30V 3A 8-SOIC
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDFS2P753Z

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Diode (Isolated)
• Rds On (max) @ Id, Vgs: 115 mOhm @ 3A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 3A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 9.3nC @ 10V
• Input Capacitance (ciss) @ Vds: 455pF @ 10V
• Power - Max: 1.6W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Transistor Polarity: P Channel
• Continuous Drain Current Id: 3A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 115mohm
• Rds(on) Test Voltage Vgs: -10V
• Threshold Voltage Vgs Typ: -2.1V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDFS2P753ZTR

FDFS2P753Z Rev.A
Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
Schottky Diode Characteristics
BV
∆BV
I
I
V
r
g
C
C
C
R
t
t
t
t
Q
Q
Q
Q
V
t
Q
I
V
∆V
DSS
GSS
d(on)
r
d(off)
f
rr
R
DS(on)
FS
GS(th)
SD
F
iss
oss
rss
g
∆T
∆T
g(TOT)
g(4.5)
gs
gd
rr
Symbol
DSS
GS(th)
DSS
J
J
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
Drain to Source On-Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge at -10V
Total Gate Charge at -4.5V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Leakage
Forward Voltage
Parameter
T
J
= 25°C unless otherwise noted
V
V
V
V
V
f = 1MHz
f = 1MHz
V
I
V
V
V
125°C
V
V
I
I
I
V
V
V
V
I
I
D
F
D
D
F
F
DD
GS
GS
GS
GS
GS
GS
GS
DS
DS
GS
DS
GS
GS
R
= -3.0A, di/dt = 100A/µs
= -250µA, referenced to 25°C
= 1A
= 2A
= -250µA, V
= -250µA, referenced to 25°C
= -20V
= 0V to -10V
= 0V to -4.5V
= -10V, V
= -10V, I
= -10V, R
= -5V, I
= 0V, I
= -24V,
= 0V
= V
= -10V, I
= -4.5V, I
= -10V, I
= ±25V, V
2
DS
Test Conditions
, I
S
D
D
= -2.0A
D
D
D
GS
GEN
= -3.0A
GS
= -3.0A
DS
D
= -250µA
= -3.0A
= -3.0A, T
= -1.5A
= 0V,
= 0V
= 0V
= 6Ω
V
T
I
T
T
T
T
T
T
D
DD
J
J
J
J
J
J
J
= -3.0A
= 125°C
(Note 3)
= 25°C
= 125°C
= 25°C
= 125°C
= 25°C
= 125°C
= -10V
J
=
Min
-30
-1
-0.9
-2.1
340
115
6.6
3.3
1.3
1.6
Typ
80
65
18
20
14
31
18
20
69
97
-21
7
5
6
-1.2
Max
455
110
100
-100
115
180
162
-190
0.39
0.58
0.53
±10
9.3
4.6
14
50
33
35
30
21
-66
0.5
-3
www.fairchildsemi.com
-1
mV/°C
mV/°C
Units
mΩ
nC
mA
pF
pF
pF
nC
nC
nC
nC
µA
µA
ns
ns
ns
ns
ns
µA
Ω
V
V
V
S
V