FDFS2P753Z Fairchild Semiconductor, FDFS2P753Z Datasheet - Page 6

• Manufacturer Part Number: FDFS2P753Z
• Description: MOSFET P-CH 30V 3A 8-SOIC
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDFS2P753Z

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Diode (Isolated)
• Rds On (max) @ Id, Vgs: 115 mOhm @ 3A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 3A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 9.3nC @ 10V
• Input Capacitance (ciss) @ Vds: 455pF @ 10V
• Power - Max: 1.6W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Transistor Polarity: P Channel
• Continuous Drain Current Id: 3A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 115mohm
• Rds(on) Test Voltage Vgs: -10V
• Threshold Voltage Vgs Typ: -2.1V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDFS2P753ZTR

FDFS2P753Z Rev.A
Typical Characteristics
Figure 13.
1E-3
0.01
0.1
10
30
0.005
1
0.01
0.0
0.1
2
1
10
-4
Schottky Diode Forward Voltage
0.4
T
J
DUTY CYCLE-DESCENDING ORDER
D = 0.5
= 25
V
T
F
J
, REVERSE VOLTAGE (V)
0.2
0.1
0.05
0.02
0.01
= 125
o
C
SINGLE PULSE
10
0.8
o
C
-3
T
Figure 15. Transient Thermal Response Curve
1.2
J
= 25°C unless otherwise noted
10
-2
1.6
t, RECTANGULAR PULSE DURATION (s)
2.0
10
-1
6
Figure 14.
1E-3
0.01
0.1
10
10
1
0
0
Schottky Diode Reverse Current
V
NOTES:
DUTY FACTOR: D = t
PEAK T
5
R
, REVERSE VOLTAGE (V)
10
1
J
= P
T
DM
T
J
J
= 25
10
= 125
x Z
P
θJA
o
C
DM
o
1
C
/t
x R
2
10
θJA
2
t
1
+ T
t
15
2
A
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