FDFS2P753Z Fairchild Semiconductor, FDFS2P753Z Datasheet - Page 5

MOSFET P-CH 30V 3A 8-SOIC

FDFS2P753Z

Manufacturer Part Number
FDFS2P753Z
Description
MOSFET P-CH 30V 3A 8-SOIC
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet

Specifications of FDFS2P753Z

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Diode (Isolated)
Rds On (max) @ Id, Vgs
115 mOhm @ 3A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
3A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
9.3nC @ 10V
Input Capacitance (ciss) @ Vds
455pF @ 10V
Power - Max
1.6W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Transistor Polarity
P Channel
Continuous Drain Current Id
3A
Drain Source Voltage Vds
30V
On Resistance Rds(on)
115mohm
Rds(on) Test Voltage Vgs
-10V
Threshold Voltage Vgs Typ
-2.1V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDFS2P753ZTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDFS2P753Z
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
FDFS2P753Z Rev.A
Typical Characteristics
0.01
0.1
10
30
10
Figure 7.
8
6
4
2
0
4
3
2
1
1
0.01
0.1
0
Figure 9.
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
Figure 11. Forward Bias Safe
-V DS , DRAIN to SOURCE VOLTAGE (V)
Switching Capability
Gate Charge Characteristics
t
Operating Area
Unclamped Inductive
AV
DS(on)
2
- Q
, TIME IN AVALANCHE(ms)
g
, GATE CHARGE(nC)
1
T
V
SINGLE PULSE
T J = MAX RATED
T A = 25 O C
J
0.1
DD
= 125
= -5V
4
o
C
T
V
J
DD
= 25°C unless otherwise noted
= -15V
10
T
V
J
DD
= 25
6
= -10V
o
C
1
100ms
100us
10ms
1ms
1s
10s
DC
80
8
5
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
800
100
200
100
20
Figure 10.
0.6
10
0.1
10
1
25
Figure 12.
-4
Figure 8.
R
Current vs Case Temperature
f = 1MHz
V
θ
JA
GS
10
SINGLE PULSE
V
-V
= 78
= 0V
GS
-3
T
DS
50
A
Power Dissipation
Maximum Continuous Drain
= -10V
to Source Voltage
o
, AMBIENT TEMPERATURE
, DRAIN TO SOURCE VOLTAGE (V)
C/W
10
Single Pulse Maximum
Capacitance vs Drain
t, PULSE WIDTH (s)
-2
75
1
10
-1
V
GS
FOR TEMPERATURES
ABOVE 25
CURRENT AS FOLLOWS:
I = I
V
= -4.5V
10
GS
100
25
0
= -10V
o
C DERATE PEAK
10
150 T
---------------------- -
125
1
(
125
o
C
www.fairchildsemi.com
C
C
10
C
oss
A
iss
rss
)
T
10
A
= 25
2
o
C
30
150
10
3

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