BSP373 L6327 Infineon Technologies, BSP373 L6327 Datasheet
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Manufacturer Part Number
BSP373 L6327
Description
MOSFET N-CH 100V 1.7A SOT-223
Manufacturer
Infineon Technologies
Specifications of BSP373 L6327
Package / Case
SOT-223 (3 leads + Tab), SC-73, TO-261
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
300 mOhm @ 1.7A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
1.7A
Vgs(th) (max) @ Id
4V @ 1mA
Input Capacitance (ciss) @ Vds
550pF @ 25V
Power - Max
1.8W
Mounting Type
Surface Mount
Minimum Operating Temperature
- 55 C
Configuration
Single Dual Drain
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.3 Ohm @ 10 V
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
1.7 A @ Ta=28C
Power Dissipation
1800 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gate Charge (qg) @ Vgs
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
BSP373 L6327 BSP373L6327INTR BSP373L6327XT SP000087065
SIPMOS
• N channel
• Enhancement mode
• Avalanche rated
• V
•
Rev 1.2
Type
BSP 373
Type
BSP 373
Maximum Ratings
Parameter
Continuous drain current
T
DC drain current, pulsed
T
Avalanche energy, single pulse
I
L = 23.3 mH, T
Gate source voltage
Power dissipation
T
D
Pb-free lead plating; RoHS compliant available
A
A
A
GS(th)
= 1.7 A, V
= 28 ˚C
= 25 ˚C
= 25 ˚C
= 2.1 ... 4.0 V
®
Small-Signal Transistor
DD
j
= 25 V, R
= 25 ˚C
V
100 V
RoHS compliant
Yes
DS
GS
= 25
I
1.7 A
D
Ω
R
0.3
Tape and Reel Information
L6327: 1000 pcs/reel
DS(on)
Ω
1
Symbol
I
I
E
V
P
D
Dpuls
AS
GS
tot
Package
PG-SOT-223
Pin 1
G
Values
±
Pin 2
Marking
BSP 373
1.7
6.8
1.8
45
D
20
Pin 3
S
BSP 373
2007-02-08
Unit
A
mJ
V
W
Pin 4
D
Related parts for BSP373 L6327
BSP373 L6327 Summary of contents
SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Avalanche rated • 2.1 ... 4.0 V GS(th) • Pb-free lead plating; RoHS compliant available Type V DS BSP 373 100 V Type RoHS compliant BSP 373 ...
Maximum Ratings Parameter Chip or operating temperature Storage temperature Thermal resistance, chip to ambient air Thermal resistance, junction-soldering point DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 1) Transistor on epoxy pcb ...
Electrical Characteristics Parameter Dynamic Characteristics Transconductance ≥ 1 DS(on)max, D Input capacitance MHz GS DS Output ...
Electrical Characteristics Parameter Reverse Diode Inverse diode continuous forward current ˚C A Inverse diode direct current,pulsed ˚C A Inverse diode forward voltage 1 ...
Power dissipation = ƒ tot A 2.0 W 1.6 P tot 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 Safe operating area I = parameter : D ...
Typ. output characteristics = ƒ parameter µ 3 tot 3 2.8 2.4 2.0 1.6 1.2 ...
Drain-source on-resistance = ƒ (on) j parameter 1 0.75 Ω 0.65 R 0.60 DS (on) 0.55 0.50 0.45 0.40 98% 0.35 0.30 0.25 typ 0.20 0.15 ...
T Avalanche energy E AS parameter 1 Ω 23 ...
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