BSP373 L6327 Infineon Technologies, BSP373 L6327 Datasheet - Page 5

• Manufacturer Part Number: BSP373 L6327
• Description: MOSFET N-CH 100V 1.7A SOT-223
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of BSP373 L6327

• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 300 mOhm @ 1.7A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 1.7A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Input Capacitance (ciss) @ Vds: 550pF @ 25V
• Power - Max: 1.8W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single Dual Drain
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.3 Ohm @ 10 V
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 1.7 A @ Ta=28C
• Power Dissipation: 1800 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: BSP373 L6327; BSP373L6327INTR; BSP373L6327XT; SP000087065

Power dissipation
P
P
Safe operating area I
parameter : D = 0, T
Rev 1.2
tot
tot
= ƒ ( T
2.0
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
W
0
A
)
20
40
C
=25˚C
D
=f( V
60
DS
)
80
100
120
T
˚C
A
160
5
Drain current
I
parameter: V
Transient thermal impedance
Z
parameter: D = t
Z
D
thJA
I
th JA
D
= ƒ ( T
K/W
10
10
10
10
10
10
10
10
1.8
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
= ƒ ( t
A
-1
-2
-3
-4
-5
A
2
1
0
10
0
)
-8
p
)
20
10
GS
single pulse
-7
≥ 10 V
p
40
10
/ T
-6
60
10
-5
80
10
-4
100
10
-3
120
10
BSP 373
D = 0.50
-2
2007-02-08
T
t
˚C
p
0.20
0.10
0.05
0.02
0.01
10
A
-1
s
160
10
0