BSP373 L6327 Infineon Technologies, BSP373 L6327 Datasheet - Page 5
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BSP373 L6327
Manufacturer Part Number
BSP373 L6327
Description
MOSFET N-CH 100V 1.7A SOT-223
Manufacturer
Infineon Technologies
Series
SIPMOS®r
Datasheet
1.BSP373_L6327.pdf
(8 pages)
Specifications of BSP373 L6327
Package / Case
SOT-223 (3 leads + Tab), SC-73, TO-261
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
300 mOhm @ 1.7A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
1.7A
Vgs(th) (max) @ Id
4V @ 1mA
Input Capacitance (ciss) @ Vds
550pF @ 25V
Power - Max
1.8W
Mounting Type
Surface Mount
Minimum Operating Temperature
- 55 C
Configuration
Single Dual Drain
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.3 Ohm @ 10 V
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
1.7 A @ Ta=28C
Power Dissipation
1800 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gate Charge (qg) @ Vgs
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
BSP373 L6327
BSP373L6327INTR
BSP373L6327XT
SP000087065
BSP373L6327INTR
BSP373L6327XT
SP000087065
Power dissipation
P
P
Safe operating area I
parameter : D = 0, T
Rev 1.2
tot
tot
= ƒ ( T
2.0
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
W
0
A
)
20
40
C
=25˚C
D
=f( V
60
DS
)
80
100
120
T
˚C
A
160
5
Drain current
I
parameter: V
Transient thermal impedance
Z
parameter: D = t
Z
D
thJA
I
th JA
D
= ƒ ( T
K/W
10
10
10
10
10
10
10
10
1.8
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
= ƒ ( t
A
-1
-2
-3
-4
-5
A
2
1
0
10
0
)
-8
p
)
20
10
GS
single pulse
-7
≥ 10 V
p
40
10
/ T
-6
60
10
-5
80
10
-4
100
10
-3
120
10
BSP 373
D = 0.50
-2
2007-02-08
T
t
˚C
p
0.20
0.10
0.05
0.02
0.01
10
A
-1
s
160
10
0