BSP373 L6327 Infineon Technologies, BSP373 L6327 Datasheet - Page 4

• Manufacturer Part Number: BSP373 L6327
• Description: MOSFET N-CH 100V 1.7A SOT-223
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of BSP373 L6327

• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 300 mOhm @ 1.7A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 1.7A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Input Capacitance (ciss) @ Vds: 550pF @ 25V
• Power - Max: 1.8W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single Dual Drain
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.3 Ohm @ 10 V
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 1.7 A @ Ta=28C
• Power Dissipation: 1800 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: BSP373 L6327; BSP373L6327INTR; BSP373L6327XT; SP000087065

Electrical Characteristics, at T
Rev 1.2
Parameter
Reverse Diode
Inverse diode continuous forward current
T
Inverse diode direct current,pulsed
T
Inverse diode forward voltage
V
Reverse recovery time
V
Reverse recovery charge
V
A
A
GS
R
R
= 25 ˚C
= 25 ˚C
= 30 V, I
= 30 V, I
= 0 V, I
F =
F =
F
= 1.7 A, T
l
l
S,
S,
d i
d i
F
F
/d t = 100 A/µs
/d t = 100 A/µs
j
= 25 ˚C
j
= 25˚C, unless otherwise specified
4
Symbol
I
I
V
t
Q
S
SM
rr
SD
rr
min.
-
-
-
-
-
Values
typ.
-
-
-
-
0.8
max.
-
-
1.7
6.8
1.1
BSP 373
2007-02-08
Unit
A
V
ns
µC