BSP373 L6327 Infineon Technologies, BSP373 L6327 Datasheet - Page 4
![MOSFET N-CH 100V 1.7A SOT-223](/photos/5/51/55179/448-sot-223_sml.jpg)
BSP373 L6327
Manufacturer Part Number
BSP373 L6327
Description
MOSFET N-CH 100V 1.7A SOT-223
Manufacturer
Infineon Technologies
Series
SIPMOS®r
Datasheet
1.BSP373_L6327.pdf
(8 pages)
Specifications of BSP373 L6327
Package / Case
SOT-223 (3 leads + Tab), SC-73, TO-261
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
300 mOhm @ 1.7A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
1.7A
Vgs(th) (max) @ Id
4V @ 1mA
Input Capacitance (ciss) @ Vds
550pF @ 25V
Power - Max
1.8W
Mounting Type
Surface Mount
Minimum Operating Temperature
- 55 C
Configuration
Single Dual Drain
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.3 Ohm @ 10 V
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
1.7 A @ Ta=28C
Power Dissipation
1800 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gate Charge (qg) @ Vgs
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
BSP373 L6327
BSP373L6327INTR
BSP373L6327XT
SP000087065
BSP373L6327INTR
BSP373L6327XT
SP000087065
Electrical Characteristics, at T
Rev 1.2
Parameter
Reverse Diode
Inverse diode continuous forward current
T
Inverse diode direct current,pulsed
T
Inverse diode forward voltage
V
Reverse recovery time
V
Reverse recovery charge
V
A
A
GS
R
R
= 25 ˚C
= 25 ˚C
= 30 V, I
= 30 V, I
= 0 V, I
F =
F =
F
= 1.7 A, T
l
l
S,
S,
d i
d i
F
F
/d t = 100 A/µs
/d t = 100 A/µs
j
= 25 ˚C
j
= 25˚C, unless otherwise specified
4
Symbol
I
I
V
t
Q
S
SM
rr
SD
rr
min.
-
-
-
-
-
Values
typ.
-
-
-
-
0.8
max.
-
-
1.7
6.8
1.1
BSP 373
2007-02-08
Unit
A
V
ns
µC