STB60NF06T4 STMicroelectronics, STB60NF06T4 Datasheet

MOSFET N-CH 60V 60A D2PAK

STB60NF06T4

Manufacturer Part Number
STB60NF06T4
Description
MOSFET N-CH 60V 60A D2PAK
Manufacturer
STMicroelectronics
Series
STripFET™r
Datasheet

Specifications of STB60NF06T4

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
16 mOhm @ 30A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
60A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
66nC @ 10V
Input Capacitance (ciss) @ Vds
1810pF @ 25V
Power - Max
110W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.015 Ohms
Forward Transconductance Gfs (max / Min)
20 S
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
60 A
Power Dissipation
110 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Fall Time
20 ns
Minimum Operating Temperature
- 65 C
Rise Time
108 ns
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-7950-2
STB60NF06T4

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STB60NF06T4
Manufacturer:
ST MICROELECTRONICS
Quantity:
30 000
Part Number:
STB60NF06T4
Manufacturer:
ST
Quantity:
12 500
Part Number:
STB60NF06T4
Manufacturer:
ST
Quantity:
20 000
Order codes
General features
Description
This Power MOSFET series realized with
STMicroelectronics unique STripFET process has
specifically been designed to minimize input
capacitance and gate charge. It is therefore
suitable as primary switch in advanced high-
efficiency isolated DC-DC converters for Telecom
and Computer application. It is also intended for
any application with low gate charge drive
requirements.
Applications
June 2006
STB60NF06-1
STB60NF06
Exceptional dv/dt capability
100% avalanche tested
Application oriented characterization
Switching application
Type
STB60NF06T4
STB60NF06-1
Part number
V
60V
60V
DSS
<0.016Ω
<0.016Ω
R
DS(on)
N-channel 60V - 0.014Ω - 60A - D
B60NF06
B60NF06
Marking
60A
60
I
D
Rev 3
Internal schematic diagram
STripFET™ II Power MOSFET
Package
D
D
I
2
2
2
PAK
PAK
PAK
1
3
STB60NF06-1
STB60NF06
2
Tape & reel
Packaging
PAK/I
I
2
Tube
PAK
www.st.com
1 2
2
PAK
3
1/14
14

Related parts for STB60NF06T4

STB60NF06T4 Summary of contents

Page 1

... DC-DC converters for Telecom and Computer application also intended for any application with low gate charge drive requirements. Applications ■ Switching application Order codes Part number STB60NF06T4 STB60NF06-1 June 2006 N-channel 60V - 0.014Ω - 60A - D STripFET™ II Power MOSFET R I DS(on) D < ...

Page 2

Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...

Page 3

STB60NF06 - STB60NF06-1 1 Electrical ratings Table 1. Absolute maximum ratings Symbol V Drain-source voltage ( Drain-gate voltage (R DGR V Gate- source voltage GS I Drain current (continuous Drain current (continuous ...

Page 4

Electrical characteristics 2 Electrical characteristics (T =25°C unless otherwise specified) CASE Table 4. On/off states Symbol Drain-source V (BR)DSS breakdown voltage Zero gate voltage I DSS drain current (V Gate-body leakage I GSS current (V V Gate threshold voltage GS(th) ...

Page 5

STB60NF06 - STB60NF06-1 Table 6. Source drain diode Symbol Source-drain current I SD Source-drain current (1) I SDM (pulsed) (2) V Forward on voltage SD t Reverse recovery time rr Q Reverse recovery charge rr I Reverse recovery current RRM ...

Page 6

Electrical characteristics 2.1 Electrical characteristics (curves) Figure 1. Safe operating area Figure 3. Output characterisics Figure 5. Transconductance 6/14 STB60NF06 - STB60NF06-1 Figure 2. Thermal impedance Figure 4. Transfer characteristics Figure 6. Static drain-source on resistance ...

Page 7

STB60NF06 - STB60NF06-1 Figure 7. Gate charge vs gate-source voltage Figure 8. Figure 9. Normalized gate threshold voltage vs temperature Figure 11. Source-drain diode forward characteristics Electrical characteristics Capacitance variations Figure 10. Normalized on resistance vs temperature 7/14 ...

Page 8

Test circuit 3 Test circuit Figure 12. Switching times test circuit for resistive load Figure 14. Test circuit for inductive load switching and diode recovery times Figure 16. Unclamped inductive waveform 8/14 STB60NF06 - STB60NF06-1 Figure 13. Gate charge test ...

Page 9

STB60NF06 - STB60NF06-1 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package ...

Page 10

Package mechanical data DIM 10/ PAK MECHANICAL DATA TO-247 MECHANICAL DATA mm. MIN. TYP MAX. 4.4 4.6 2.49 2.69 0.03 ...

Page 11

STB60NF06 - STB60NF06-1 DIM TO-262 (I PAK) MECHANICAL DATA mm. MIN. TYP MAX. 4.40 4.60 2.40 2.72 0.61 0.88 1.14 1.70 0.49 0.70 1.23 1.32 8.95 ...

Page 12

Packing mechanical data 5 Packing mechanical data 2 D PAK FOOTPRINT TAPE MECHANICAL DATA mm DIM. MIN. MAX. A0 10.5 10.7 B0 15.7 15.9 D 1.5 1.6 D1 1.59 1.61 E 1.65 1.85 F 11.4 11.6 K0 4.8 5.0 P0 ...

Page 13

STB60NF06 - STB60NF06-1 6 Revision history Table 7. Revision history Date 21-Jun-2004 16-Jun-2006 Revision 2 Preliminary version 3 New template, no content change. Revision history Changes 13/14 ...

Page 14

... Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. ...

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