STB60NF06T4 STMicroelectronics, STB60NF06T4 Datasheet - Page 7

• Manufacturer Part Number: STB60NF06T4
• Description: MOSFET N-CH 60V 60A D2PAK
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STB60NF06T4

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 16 mOhm @ 30A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 60A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 66nC @ 10V
• Input Capacitance (ciss) @ Vds: 1810pF @ 25V
• Power - Max: 110W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.015 Ohms
• Forward Transconductance Gfs (max / Min): 20 S
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 60 A
• Power Dissipation: 110 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Fall Time: 20 ns
• Minimum Operating Temperature: - 65 C
• Rise Time: 108 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-7950-2; STB60NF06T4

STB60NF06 - STB60NF06-1
Figure 7.
Figure 9.
Figure 11. Source-drain diode forward
Gate charge vs gate-source voltage Figure 8.
Normalized gate threshold voltage
vs temperature
characteristics
Figure 10. Normalized on resistance vs
Capacitance variations
temperature
Electrical characteristics
7/14