STB60NF06T4 STMicroelectronics, STB60NF06T4 Datasheet - Page 4

• Manufacturer Part Number: STB60NF06T4
• Description: MOSFET N-CH 60V 60A D2PAK
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STB60NF06T4

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 16 mOhm @ 30A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 60A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 66nC @ 10V
• Input Capacitance (ciss) @ Vds: 1810pF @ 25V
• Power - Max: 110W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.015 Ohms
• Forward Transconductance Gfs (max / Min): 20 S
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 60 A
• Power Dissipation: 110 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Fall Time: 20 ns
• Minimum Operating Temperature: - 65 C
• Rise Time: 108 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-7950-2; STB60NF06T4

Electrical characteristics
2
4/14
Electrical characteristics
(T
Table 4.
Table 5.
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
V
Symbol
Symbol
CASE
R
V
(BR)DSS
g
t
t
I
C
I
C
GS(th)
DS(on)
C
Q
d(on)
d(off)
Q
DSS
GSS
fs
Q
oss
t
t
iss
rss
gs
gd
r
f
(1)
g
=25°C unless otherwise specified)
Forward
transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
Drain-source
breakdown voltage
Zero gate voltage
drain current (V
Gate-body leakage
current (V
Gate threshold voltage
Static drain-source on
resistance
On/off states
Dynamic
Parameter
Parameter
DS
= 0)
GS
= 0)
I
V
V
T
V
V
V
V
V
V
V
R
(see
V
V
(see
D
C
DS
DS
GS
DS
GS
GS
GS
DS
DS
DD
DD
G
= 250µA, V
= 125°C
Test conditions
= 4.7Ω V
Test conditions
= 15V
= Max rating
= Max rating,
= ± 20V
= V
= 10V, I
= 25V, f = 1MHz,
= 0
= 30V, I
= 48V, I
= 10V, R
Figure
Figure
GS
,
, I
I
D
12)
13)
D
GS
D
D
D
G
= 30A
GS
= 30A
= 30A
= 60A,
= 250µA
= 4.7Ω
= 10V
=0
Min.
Min.
60
STB60NF06 - STB60NF06-1
2
0.015
1810
Typ.
Typ.
360
125
108
20
16
43
20
49
18
14
0.016
Max.
Max.
±100
66
10
1
4
Unit
Unit
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
µA
µA
nA
S
V
V
Ω