STB60NF06T4 STMicroelectronics, STB60NF06T4 Datasheet - Page 11

• Manufacturer Part Number: STB60NF06T4
• Description: MOSFET N-CH 60V 60A D2PAK
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STB60NF06T4

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 16 mOhm @ 30A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 60A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 66nC @ 10V
• Input Capacitance (ciss) @ Vds: 1810pF @ 25V
• Power - Max: 110W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.015 Ohms
• Forward Transconductance Gfs (max / Min): 20 S
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 60 A
• Power Dissipation: 110 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Fall Time: 20 ns
• Minimum Operating Temperature: - 65 C
• Rise Time: 108 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-7950-2; STB60NF06T4

STB60NF06 - STB60NF06-1
DIM.
A1
b1
c2
e1
L1
L2
A
D
E
b
c
e
L
4.40
2.40
0.61
1.14
0.49
1.23
8.95
2.40
4.95
3.50
1.27
MIN.
10
13
TO-262 (I
mm.
TYP
2
PAK) MECHANICAL DATA
10.40
MAX.
4.60
2.72
0.88
1.70
0.70
1.32
9.35
2.70
5.15
3.93
1.40
14
0.173
0.094
0.024
0.044
0.019
0.048
0.352
0.094
0.194
0.393
0.511
0.137
0.050
MIN.
Package mechanical data
TYP.
inch
0.181
0.107
0.034
0.066
0.027
0.052
0.368
0.106
0.202
0.410
0.551
0.154
0.055
MAX.
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