SPW17N80C3 Infineon Technologies, SPW17N80C3 Datasheet
SPW17N80C3
Specifications of SPW17N80C3
SPW17N80C3IN
SPW17N80C3X
SPW17N80C3XK
SPW17N80C3XTIN
SPW17N80C3XTIN
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Related parts for SPW17N80C3
SPW17N80C3 Summary of contents
Page 1
... Gate source voltage AC (f >1Hz) Power dissipation 25°C C Operating and storage temperature Rev. 2 247 Ordering Code Q67040-S4359 Symbol puls jmax E 1) limited jmax limited jmax Page 1 SPW17N80C3 DS(on Marking 17N80C3 Value 670 AS 0 ±20 GS ± 208 tot T -55... +150 j , stg 800 V Ω 0.29 ...
Page 2
... GS(th =800V, V =0V, V DSS DS GS =25° =150° =20V, V =0V V GSS GS DS =10V, I =11A, V DS(on =25° =150° f=1MHz, open Drain R G Page 2 SPW17N80C3 Value 50 Values min. typ. max 0 260 Values min. typ. max. 800 - - - 870 - 2 250 - - 100 - 0.25 ...
Page 3
... V d(on =17A, R =4.7 Ω =125° d(off =640V, I =17A =640V, I =17A 10V =640V, I =17A V D (plateau) DD Page 3 SPW17N80C3 Values min. typ. max 2320 - 1250 - 124 - 25 =0/10V 177 - while V is rising from 0 to 80% V oss DS while V is rising from 0 to 80% V ...
Page 4
... /dt=100A/µ rrm di /dt rr Unit Symbol Thermal capacitance K/W C th1 C th2 C th3 C th4 C th5 C th6 th1 th th1 th2 th,n Page 4 SPW17N80C3 Values min. typ 550 = 1200 Value typ. 0.0003562 0.001337 0.001831 0.005033 0.012 0.092 E xternal H eatsink T case Unit max 1.2 ...
Page 5
... Transient thermal impedance thJC p parameter K Rev. 2.1 2 Safe operating area parameter : 100 120 °C 160 Typ. output characteristic parameter 0.01 single pulse Page 5 SPW17N80C3 ) DS =25° 0.001 0. 0 =25° µ 20V 10V 2005-02- ...
Page 6
... DS(on) parameter: T 1.5 20V Ω 10V 8V 7V 1.3 6.5V 1.2 6V 1.1 5.5V 0.9 5V 0.8 0.7 4.5V 4V 0.6 0 Typ. transfer characteristics parameter °C 100 180 T j Page 6 SPW17N80C3 = =150° 4. ≥ DS(on)max = 10 µs p 25°C 150° 2005-02-10 6. 10V 20V ...
Page 7
... Rev. 2.1 10 Forward characteristics of body diode parameter 100 120 160 Q Gate 12 Avalanche energy E AS par =25° (START µ Page 7 SPW17N80C3 ) µ SPW17N80C3 °C typ 150 °C typ °C (98 150 °C (98 0.4 0.8 1 700 600 550 500 450 400 ...
Page 8
... Rev. 2.1 14 Avalanche power losses P AR parameter: E 500 W 400 350 300 250 200 150 100 100 °C 180 Typ oss µJ C iss C oss 500 600 V 800 V DS Page 8 SPW17N80C3 = =0.5mJ stored energy oss ) 100 200 300 400 500 600 V 800 ...
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... Definition of diodes switching characteristics Rev Page 9 SPW17N80C3 2005-02-10 ...
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G Rev. 2 ...
Page 11
... Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.1 Page 11 SPW17N80C3 2005-02-10 ...