SPW17N80C3 Infineon Technologies, SPW17N80C3 Datasheet - Page 5

• Manufacturer Part Number: SPW17N80C3
• Description: MOSFET N-CH 800V 17A TO-247
• Manufacturer: Infineon Technologies
• Series: CoolMOS™r

Specifications of SPW17N80C3

• Package / Case: TO-247-3 (Straight Leads)
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 290 mOhm @ 11A, 10V
• Drain To Source Voltage (vdss): 800V
• Current - Continuous Drain (id) @ 25° C: 17A
• Vgs(th) (max) @ Id: 3.9V @ 1mA
• Gate Charge (qg) @ Vgs: 177nC @ 10V
• Input Capacitance (ciss) @ Vds: 2320pF @ 25V
• Power - Max: 208W
• Mounting Type: Through Hole
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.29 Ohm @ 10 V
• Drain-source Breakdown Voltage: 800 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 17 A
• Power Dissipation: 208000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Fall Time: 6 ns
• Rise Time: 15 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SP000013369; SPW17N80C3IN; SPW17N80C3X; SPW17N80C3XK; SPW17N80C3XTIN; SPW17N80C3XTIN

1 Power dissipation
P
3 Transient thermal impedance
Z
parameter: D = t
Rev. 2.1
thJC
tot
K/W
10
10
10
10
= f ( T
10
10
240
200
180
160
140
120
100
W
80
60
40
20
= f (t
-1
-2
-3
-4
0
1
0
10
0
SPW17N80C3
-7
C
p
20
)
)
10
-6
40
p
/T
10
60
-5
80
10
-4
100
D = 0.5
D = 0.2
D = 0.1
D = 0.05
D = 0.02
D = 0.01
single pulse
10
120
-3
°C
s
T
t
p
C
160
10
Page 5
-1
2 Safe operating area
I
parameter : D = 0 , T
4 Typ. output characteristic
I
parameter: t
D
D
= f ( V
= f ( V
10
10
10
10
10
A
A
70
60
55
50
45
40
35
30
25
20
15
10
-1
-2
5
0
2
1
0
10
0
DS
0
DS
); T
)
p
5
= 10 µs, V
j
=25°C
tp = 0.001 ms
tp = 0.01 ms
tp = 0.1 ms
tp = 1 ms
DC
10
10
1
C
=25°C
15
GS
SPW17N80C3
8V
7V
6V
5V
20V
10V
20
10
2005-02-10
2
V
DS
V
V
V
DS
30
10
3