SPW17N80C3 Infineon Technologies, SPW17N80C3 Datasheet - Page 6

• Manufacturer Part Number: SPW17N80C3
• Description: MOSFET N-CH 800V 17A TO-247
• Manufacturer: Infineon Technologies
• Series: CoolMOS™r

Specifications of SPW17N80C3

• Package / Case: TO-247-3 (Straight Leads)
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 290 mOhm @ 11A, 10V
• Drain To Source Voltage (vdss): 800V
• Current - Continuous Drain (id) @ 25° C: 17A
• Vgs(th) (max) @ Id: 3.9V @ 1mA
• Gate Charge (qg) @ Vgs: 177nC @ 10V
• Input Capacitance (ciss) @ Vds: 2320pF @ 25V
• Power - Max: 208W
• Mounting Type: Through Hole
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.29 Ohm @ 10 V
• Drain-source Breakdown Voltage: 800 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 17 A
• Power Dissipation: 208000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Fall Time: 6 ns
• Rise Time: 15 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SP000013369; SPW17N80C3IN; SPW17N80C3X; SPW17N80C3XK; SPW17N80C3XTIN; SPW17N80C3XTIN

5 Typ. output characteristic
I
parameter: t
7 Drain-source on-state resistance
R
parameter : I
Rev. 2.1
D
DS(on)
= f ( V
Ω
A
1.6
1.2
0.8
0.6
0.4
0.2
35
25
20
15
10
5
0
1
0
-60
0
SPW17N80C3
DS
= f (T
); T
-20
p
5
D
j
= 10 µs, V
)
j
= 11 A, V
=150°C
10
20
98%
typ
15
60
GS
GS
= 10 V
20V
10V
8V
7V
100
20
6.5V
6V
5.5V
5V
4.5V
4V
V
°C
DS
T
V
j
180
30
Page 6
6 Typ. drain-source on resistance
R
parameter: T
8 Typ. transfer characteristics
I
parameter: t
D
DS(on)
= f ( V
1.5
Ω
1.3
1.2
1.1
0.9
0.8
0.7
0.6
0.5
A
65
55
50
45
40
35
30
25
20
15
10
1
5
0
0
0
= f (I
GS
4V 4.5V 5V
2
D
); V
5
)
p
j
=150°C, V
4
= 10 µs
DS
10
6
≥ 2 x I
8
15
5.5V
D
10
GS
x R
20
SPW17N80C3
12
150°C
25°C
6V
DS(on)max
14
25
2005-02-10
16
6.5V
A
I
V
V
D
7V
8V
10V
20V
GS
35
20