SPW35N60C3 Infineon Technologies, SPW35N60C3 Datasheet
SPW35N60C3
Specifications of SPW35N60C3
SPW35N60C3
SPW35N60C3IN
SPW35N60C3X
SPW35N60C3XK
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SPW35N60C3 Summary of contents
Page 1
... E I =34 =34 /dt V =480 static >1 Hz =25 °C tot stg dv/dt Page 1 SPW35N60C3 @ T DS j,max DS(on),max D PG-TO247 Marking 35N60C3 Value 34.6 21.9 103.8 =50 V 1500 =50 V 1.5 34.6 50 =125 °C j ±20 ±30 313 -55 ... 150 15 650 V 0.1 Ω 34.6 A Unit A mJ ...
Page 2
... D V =600 DSS T =25 ° =600 =150 ° = GSS = =21 DS(on) T =25 ° = =21 =150 ° MHz, open drain G |V |>2 DS(on)max =21 Page 2 SPW35N60C3 Values min. typ. max 0 260 600 - - 700 2 100 = 100 - 0.081 0.1 - 0 Unit K/W ° µA nA Ω ...
Page 3
... V = =34 =3.3 Ω R d(off =480 =34 plateau only j,max oss =400V, V < <T peak BR, DSS j j,max Page 3 SPW35N60C3 Values min. typ. max. - 4500 - 1500 - 100 - 180 - 324 - 150 200 - 5 while V is rising from 0 to 80% V oss DS while V is rising from ...
Page 4
... C I S,pulse =34 =25 ° =480 /dt =100 A/µ rrm Unit Symbol Value typ. K/W C 0.00037 th1 C 0.00223 th2 C 0.00315 th3 C 0.0179 th4 C 0.098 th5 C 5) 4.4 th6 Page 4 SPW35N60C3 Values Unit min. typ. max 34 103.8 - 0.95 1 600 - µ Unit Ws/K 2005-09-21 ...
Page 5
... DS j parameter 0.2 0.1 0.05 -2 0.02 10 0.01 single pulse - [s] p Rev. 2.4 2 Safe operating area I =f parameter 120 160 Typ. output characteristics I =f parameter: V 100 Page 5 SPW35N60C3 =25 ° limited by on-state resistance 10 µs 100 µ [V] DS =25 ° [V] DS 2005-09-21 1 µ ...
Page 6
... Rev. 2.4 6 Typ. drain-source on-state resistance R =f DS(on) D parameter 0.7 5.5 V 0.6 0 0.4 0.3 4 Typ. transfer characteristics I =f parameter: T 100 100 140 180 0 Page 6 SPW35N60C3 =150 ° 5 [A] D |>2 DS(on)max j 25 °C 150 ° [V] GS 2005-09- ...
Page 7
... AR Rev. 2.4 10 Forward characteristics of reverse diode I =f parameter 480 150 200 0 12 Avalanche energy E =f 1600 1200 800 25 °C 400 Page 7 SPW35N60C3 j 25 °C, 98% 25 °C 150 °C, 98% 150 °C 0 [V] SD =17 = 100 140 T [°C] j 2.5 180 2005-09-21 ...
Page 8
... Typ. C stored energy oss E = f(V ) oss 100 200 300 V DS Rev. 2.4 14 Typ. capacitances C =f 100 140 180 [°C] 400 500 600 [V] Page 8 SPW35N60C3 ); MHz Ciss 3 Coss 2 Crss 1 0 100 200 300 V [V] DS 400 500 2005-09-21 ...
Page 9
... Definition of diode switching characteristics Rev. 2.4 Page 9 SPW35N60C3 2005-09-21 ...
Page 10
... PG-TO-247-3-1 Rev. 2.4 Page 10 SPW35N60C3 2005-09-21 ...
Page 11
... Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.4 Page 11 SPW35N60C3 2005-09-21 ...