SPW35N60C3 Infineon Technologies, SPW35N60C3 Datasheet - Page 9

• Manufacturer Part Number: SPW35N60C3
• Description: MOSFET N-CH 650V 34.6A TO-247
• Manufacturer: Infineon Technologies
• Series: CoolMOS™r

Specifications of SPW35N60C3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 100 mOhm @ 21.9A, 10V
• Drain To Source Voltage (vdss): 650V
• Current - Continuous Drain (id) @ 25° C: 34.6A
• Vgs(th) (max) @ Id: 3.9V @ 1.9mA
• Gate Charge (qg) @ Vgs: 200nC @ 10V
• Input Capacitance (ciss) @ Vds: 4500pF @ 25V
• Power - Max: 313W
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 34.6A
• Drain Source Voltage Vds: 650V
• On Resistance Rds(on): 100mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 20V
• Operating Temperature: RoHS Compliant
• Threshold Voltage Vgs Typ: 3V
• Rohs Compliant: Yes
• Configuration: Single
• Resistance Drain-source Rds (on): 0.1 Ohms
• Drain-source Breakdown Voltage: 650 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 34.6 A
• Power Dissipation: 313 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SP000014970; SPW35N60C3; SPW35N60C3IN; SPW35N60C3X; SPW35N60C3XK

SPW35N60C3
Definition of diode switching characteristics
Rev. 2.4
Page 9
2005-09-21