PSMN8R0-40PS,127 NXP Semiconductors, PSMN8R0-40PS,127 Datasheet - Page 5

• Manufacturer Part Number: PSMN8R0-40PS,127
• Description: MOSFET N-CH 40V 77A TO-220AB3
• Manufacturer: NXP Semiconductors

Specifications of PSMN8R0-40PS,127

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 7.6 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 77A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 21nC @ 10V
• Input Capacitance (ciss) @ Vds: 1262pF @ 12V
• Power - Max: 86W
• Mounting Type: Through Hole
• Package / Case: TO-220AB-3
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 7.6 mOhms
• Drain-source Breakdown Voltage: 40 V
• Continuous Drain Current: 77 A
• Power Dissipation: 86 W
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 568-4893-5; 934063913127

NXP Semiconductors
5. Thermal characteristics
Table 5.
PSMN8R0-40PS_2
Product data sheet
Symbol
R
Fig 4.
th(j-mb)
Z
(K/W)
th(j-mb)
10
10
10
10
10
-1
-2
-3
-4
1
10
values
Transient thermal impedance from junction to mounting base as a function of pulse duration; typical
-6
0.2
0.1
0.05
0.02
δ = 0.5
Thermal characteristics
Parameter
thermal resistance from junction to
mounting base
single shot
10
-5
10
-4
Rev. 02 — 25 June 2009
Conditions
see
Figure 4
10
-3
N-channel 40 V 7.6 mΩ standard level MOSFET
10
-2
PSMN8R0-40PS
Min
-
P
10
-1
Typ
1.2
t
p
T
t
p
© NXP B.V. 2009. All rights reserved.
(s)
δ =
003aad068
Max
1.74
T
t
p
t
1
Unit
K/W
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