PSMN8R0-40PS,127 NXP Semiconductors, PSMN8R0-40PS,127 Datasheet - Page 8

• Manufacturer Part Number: PSMN8R0-40PS,127
• Description: MOSFET N-CH 40V 77A TO-220AB3
• Manufacturer: NXP Semiconductors

Specifications of PSMN8R0-40PS,127

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 7.6 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 77A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 21nC @ 10V
• Input Capacitance (ciss) @ Vds: 1262pF @ 12V
• Power - Max: 86W
• Mounting Type: Through Hole
• Package / Case: TO-220AB-3
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 7.6 mOhms
• Drain-source Breakdown Voltage: 40 V
• Continuous Drain Current: 77 A
• Power Dissipation: 86 W
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 568-4893-5; 934063913127

NXP Semiconductors
PSMN8R0-40PS_2
Product data sheet
Fig 7.
Fig 9.
100
50
(S)
40
30
20
10
(A)
g
80
60
40
20
I
D
fs
0
0
function of gate-source voltage; typical values
drain current; typical values
Transfer characteristics: drain current as a
Forward transconductance as a function of
0
0
25
2
T
j
= 175 °C
50
4
25 °C
75
6
V
003aad065
003aad060
I
D
GS
(A)
(V)
100
8
Rev. 02 — 25 June 2009
Fig 8.
Fig 10. Drain-source on-state resistance as a function
(pF)
2000
1500
1000
R
(mΩ)
N-channel 40 V 7.6 mΩ standard level MOSFET
C
500
DSon
50
40
30
20
10
0
0
function of gate-source voltage; typical values
of gate-source voltage; typical values
Input and reverse transfer capacitances as a
5
2
C
C
iss
rss
4
10
PSMN8R0-40PS
6
15
8
© NXP B.V. 2009. All rights reserved.
V
GS
V
003aad064
003aad066
GS
(V)
(V)
20
10
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