PSMN2R0-30PL,127 NXP Semiconductors, PSMN2R0-30PL,127 Datasheet - Page 2

• Manufacturer Part Number: PSMN2R0-30PL,127
• Description: MOSFET N-CH 30V 100A TO-220AB3
• Manufacturer: NXP Semiconductors

Specifications of PSMN2R0-30PL,127

• Package / Case: TO-220AB-3
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 2.1 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 100A
• Vgs(th) (max) @ Id: 2.15V @ 1mA
• Gate Charge (qg) @ Vgs: 117nC @ 10V
• Input Capacitance (ciss) @ Vds: 6810pF @ 12V
• Power - Max: 211W
• Mounting Type: Through Hole
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 2.1 mOhms
• Drain-source Breakdown Voltage: 30 V
• Continuous Drain Current: 100 A
• Power Dissipation: 211 W
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-4899-5; 934063917127

NXP Semiconductors
2. Pinning information
Table 2.
3. Ordering information
Table 3.
PSMN2R0-30PL_1
Product data sheet
Pin
1
2
3
mb
Type number
PSMN2R0-30PL
Symbol
G
D
S
D
Pinning information
Ordering information
TO-220AB
Package
Name
Description
gate
drain
source
mounting base; connected to
drain
Description
plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead
TO-220AB
Rev. 01 — 24 June 2009
Simplified outline
(TO-220AB)
N-channel 30 V 2.1 mΩ logic level MOSFET
SOT78
1 2
mb
3
PSMN2R0-30PL
Graphic symbol
G
mbb076
© NXP B.V. 2009. All rights reserved.
D
Version
SOT78
S
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