PSMN2R0-30YL,115 NXP Semiconductors, PSMN2R0-30YL,115 Datasheet - Page 11
PSMN2R0-30YL,115
Manufacturer Part Number
PSMN2R0-30YL,115
Description
MOSFET N-CH 30V 100A LFPAK
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheet
1.PSMN2R0-30YL115.pdf
(14 pages)
Specifications of PSMN2R0-30YL,115
Package / Case
LFPak-4
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
2 mOhm @ 15A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
100A
Vgs(th) (max) @ Id
2.15V @ 1mA
Gate Charge (qg) @ Vgs
64nC @ 10V
Input Capacitance (ciss) @ Vds
3980pF @ 12V
Power - Max
97W
Mounting Type
Surface Mount
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
2 mOhms
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
100 A
Power Dissipation
97 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
568-4679-2
934063069115
PSMN2R0-30YL T/R
934063069115
PSMN2R0-30YL T/R
NXP Semiconductors
8. Revision history
Table 7.
PSMN2R0-30YL
Product data sheet
Document ID
PSMN2R0-30YL v.4
Modifications:
PSMN2R0-30YL_3
Revision history
20110310
20090105
Release date
•
Various changes to content.
All information provided in this document is subject to legal disclaimers.
Data sheet status
Product data sheet
Product data sheet
Rev. 4 — 10 March 2011
N-channel 30 V 2 mΩ logic level MOSFET in LFPAK
Change notice
-
-
PSMN2R0-30YL
Supersedes
PSMN2R0-30YL_3
PSMN2R0-30YL_2
© NXP B.V. 2011. All rights reserved.
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