TPCA8026(TE12L,Q,M Toshiba, TPCA8026(TE12L,Q,M Datasheet - Page 2

• Manufacturer Part Number: TPCA8026(TE12L,Q,M
• Description: MOSFET N-CH 30V 45A 8-SOP ADV
• Manufacturer: Toshiba

Specifications of TPCA8026(TE12L,Q,M

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 2.2 mOhm @ 23A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 45A
• Vgs(th) (max) @ Id: 2.5V @ 1mA
• Gate Charge (qg) @ Vgs: 113nC @ 10V
• Input Capacitance (ciss) @ Vds: 4200pF @ 10V
• Power - Max: 45W
• Mounting Type: Surface Mount
• Package / Case: 2-5Q1A
• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0022 Ohms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 45 A
• Power Dissipation: 45 W
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: TPCA8026TE12LQMTR

Thermal Characteristics
Marking
Thermal resistance, channel to case
Thermal resistance, channel to ambient
(t = 10 s)
Thermal resistance, channel to ambient
(t = 10 s)
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: (a) Device mounted on a glass-epoxy board (a)
Note 3: V
Note 4: Repetitive rating: pulse width limited by maximum channel temperature
Note 5:
TPCA
8026
(Note 5)
∗ Weekly code: (Three digits)
DD
= 24 V, T
Characteristic
∗
(a)
ch
Week of manufacture
(01 for the first week of the year, continuing up to 52 or 53)
Year of manufacture
(The last digit of the year)
Part number
= 25°C (initial), L = 0.1 mH, I
Lot No.
(Tc = 25 ℃ )
25.4 × 25.4 × 0.8
(Note 2a)
(Note 2b)
FR-4
(Unit: mm)
R
R
R
Symbol
th (ch-c)
th (ch-a)
th (ch-a)
AR
2
= 45 A
Max
2.78
44.6
78.1
(b) Device mounted on a glass-epoxy board (b)
°C/W
°C/W
°C/W
Unit
(b)
25.4 × 25.4 × 0.8
FR-4
(Unit: mm)
TPCA8026
2008-06-26