TPCA8026(TE12L,Q,M Toshiba, TPCA8026(TE12L,Q,M Datasheet - Page 4

• Manufacturer Part Number: TPCA8026(TE12L,Q,M
• Description: MOSFET N-CH 30V 45A 8-SOP ADV
• Manufacturer: Toshiba

Specifications of TPCA8026(TE12L,Q,M

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 2.2 mOhm @ 23A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 45A
• Vgs(th) (max) @ Id: 2.5V @ 1mA
• Gate Charge (qg) @ Vgs: 113nC @ 10V
• Input Capacitance (ciss) @ Vds: 4200pF @ 10V
• Power - Max: 45W
• Mounting Type: Surface Mount
• Package / Case: 2-5Q1A
• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0022 Ohms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 45 A
• Power Dissipation: 45 W
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: TPCA8026TE12LQMTR

1000
100
100
0.1
50
40
30
20
10
80
60
40
20
10
0
0
1
0.1
0
0
8
10
Common source
V DS = 10 V
Pulse test
Drain − source voltage V
Gate − source voltage V
1
0.2
3.8
6
Drain current I
5
4.5
2
4
1
3.6
Ta = −55°C
0.4
100
I
I
|Y
D
D
100
fs
– V
– V
| – I
3
DS
GS
D
0.6
Ta = −55°C
D
25
25
10
4
GS
(A)
DS
Common source
V DS = 10 V
Pulse test
Common source
Ta = 25°C
Pulse test
V GS = 2.8 V
0.8
(V)
(V)
5
3.4
3.2
3
100
1
6
4
0.32
0.24
0.16
0.08
100
100
0.4
80
60
40
20
10
0
0
1
0.1
10
0
0
Common source
Ta = 25°C
Pulse test
8
4
Drain-source voltage V
Gate − source voltage V
5
6
3.8
4.5
1
2
Drain current I
1
12
R
V
DS (ON)
2
4
I
DS
D
V GS = 10 V
– V
– V
DS
4.5
GS
– I
3
6
D
D
23
10
GS
DS
(A)
I D = 45 A
Common source
Ta = 25°C
Pulse test
Common source
Ta = 25°C
Pulse test
V GS = 2.8 V
4
8
(V)
(V)
3.6
3.4
3.2
TPCA8026
3
2008-06-26
100
10
5