TPCA8026(TE12L,Q,M Toshiba, TPCA8026(TE12L,Q,M Datasheet - Page 6

• Manufacturer Part Number: TPCA8026(TE12L,Q,M
• Description: MOSFET N-CH 30V 45A 8-SOP ADV
• Manufacturer: Toshiba

Specifications of TPCA8026(TE12L,Q,M

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 2.2 mOhm @ 23A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 45A
• Vgs(th) (max) @ Id: 2.5V @ 1mA
• Gate Charge (qg) @ Vgs: 113nC @ 10V
• Input Capacitance (ciss) @ Vds: 4200pF @ 10V
• Power - Max: 45W
• Mounting Type: Surface Mount
• Package / Case: 2-5Q1A
• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0022 Ohms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 45 A
• Power Dissipation: 45 W
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: TPCA8026TE12LQMTR

1000
100
2.5
1.5
0.5
0.1
10
3
2
1
0
1
0.1
0
I D max (continuous)
I D max (Pulse) *
* Single pulse
Curves must be derated
linearly with increase in
temperature.
(1)
(2)
Ta = 25°C
Drain − source voltage V
Ambient temperature Ta (
40
1000
DC operation
100
Safe operating area
0.1
Tc = 25 °C
10
0.001
1
1
(1) Device mounted on a glass-epoxy board (a) (Note 2a)
(2) Device mounted on a glass-epoxy board (b) (Note 2b)
(3) Tc = 25℃
(1) Device mounted on a
(2) Device mounted on a
t = 10 s
P
D
glass-epoxy board (a) (Note 2a)
glass-epoxy board (b) (Note 2b)
80
– Ta
1 ms *
0.01
V DSS max
10
t = 10 ms *
DS
120
°
C)
(V)
0.1
100
160
Pulse width t
r
th
6
− t
1
w
w
(s)
30
20
50
40
10
0
0
10
Case temperature Tc (
40
100
Single pulse
P
(2)
(1)
D
(3)
80
– Tc
1000
120
°
C)
TPCA8026
2008-06-26
160