SPD04N60S5 Infineon Technologies, SPD04N60S5 Datasheet

MOSFET N-CH 600V 4.5A TO-252

SPD04N60S5

Manufacturer Part Number
SPD04N60S5
Description
MOSFET N-CH 600V 4.5A TO-252
Manufacturer
Infineon Technologies
Series
CoolMOS™r
Datasheet

Specifications of SPD04N60S5

Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
950 mOhm @ 2.8A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
4.5A
Vgs(th) (max) @ Id
5.5V @ 200µA
Gate Charge (qg) @ Vgs
22.9nC @ 10V
Input Capacitance (ciss) @ Vds
580pF @ 25V
Power - Max
50W
Mounting Type
Surface Mount
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.95 Ohm @ 10 V
Drain-source Breakdown Voltage
600 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
4.5 A
Power Dissipation
50000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SP000077612
SPD04N60S5
SPD04N60S5INTR
SPD04N60S5XT

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SPD04N60S5
Manufacturer:
INFINEON
Quantity:
30 000
Cool MOS™ Power Transistor
Feature
• New revolutionary high voltage technology
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• Ultra low effective capacitances
• Improved transconductance
Type
SPU04N60S5
SPD04N60S5
Rev. 2.5
Maximum Ratings
Parameter
Continuous drain current
T
T
Pulsed drain current, t
Avalanche energy, single pulse
I
Avalanche energy, repetitive t
I
Avalanche current, repetitive t
Gate source voltage
Gate source voltage AC (f >1Hz)
Power dissipation,
Operating and storage temperature
D
D
C
C
= 3.4 A, V
= 4.5 A, V
= 25 °C
= 100 °C
DD
DD
= 50 V
= 50 V
T
C
Package
PG-TO251
PG-TO252
= 25°C
p
limited by T
AR
AR
limited by T
limited by T
jmax
Ordering Code
Q67040-S4228
Q67040-S4202
Page 1
jmax
jmax
1)
Symbol
I
I
E
E
I
V
V
P
T
D
D puls
AR
AS
AR
GS
GS
tot
j ,
T
stg
Marking
04N60S5
04N60S5
PG-TO252
2
R
-55... +150
DS(on)
V
I
DS
D
Value
±20
± 30
130
4.5
2.8
0.4
4.5
50
9
1
SPU04N60S5
SPD04N60S5
3
PG-TO251
2008-04-08
0.95
600
4.5
Unit
A
mJ
A
V
W
°C
1
V
A
2
3

Related parts for SPD04N60S5

SPD04N60S5 Summary of contents

Page 1

... Operating and storage temperature Rev. 2.5 Ordering Code Q67040-S4228 Q67040-S4202 Symbol puls jmax limited jmax limited jmax tot stg Page 1 SPU04N60S5 SPD04N60S5 600 0.95 DS(on) I 4.5 D PG-TO252 PG-TO251 Marking 04N60S5 04N60S5 Value 4.5 2.8 9 130 0.4 4.5 ±20 ± -55... +150 2008-04-08 V Ω ...

Page 2

... V =0V, V DSS DS GS =25° =150° =20V, V =0V V GSS GS DS =10V, I =2.8A, V DS(on =25° =150° f=1MHz, open Drain R G Page 2 SPU04N60S5 SPD04N60S5 Value Unit 20 V/ns Values Unit min. typ. max 2.5 K 260 °C Values Unit min. typ. max. 600 - - V ...

Page 3

... =4.5A =350V d(off =18 Ω I =4.5A =350V, I =4. =350V, I =4.5A 10V =350V, I =4. (plateau) DD Page 3 SPU04N60S5 SPD04N60S5 Values min. typ. max 580 - 220 - =0/10V =0/10V =0/10V 22 17 while V is rising from 0 to 80% V oss DS while V is rising from 0 to 80% V oss ...

Page 4

... GS =350V /dt=100A/µ Unit Symbol Thermal capacitance K/W C th1 C th2 C th3 C th4 C th5 C th6 th1 th th1 th2 th,n Page 4 SPU04N60S5 SPD04N60S5 Values min. typ 900 = 3.2 Value typ. 0.00007347 0.0002831 0.0004062 0.001215 0.00276 0.029 E xternal H eatsink T case Unit max. 4 1.2 V 1530 ns - µ ...

Page 5

... Power dissipation tot C SPU04N60S5 Transient thermal impedance thJC p parameter K Rev. 2.5 2 Safe operating area parameter : 100 120 °C 160 Typ. output characteristic parameter Page 5 SPU04N60S5 SPD04N60S5 ) DS =25° 0.001 0. 0 =25° µ 20V 12V 10V 2008-04- 9.5V 9V 8.5V 8V 7. ...

Page 6

... Rev. 2.5 6 Typ. drain-source on resistance R DS(on) parameter: T mΩ 9V 8.5V 3.5 8V 7.5V 2.5 7V 6. Typ. transfer characteristics parameter °C 100 180 T j Page 6 SPU04N60S5 SPD04N60S5 = =150° ≥ DS(on)max = 10 µ 20V 12V 10V 9V 8. ...

Page 7

... T =125°C j(START) 1 Rev. 2.5 10 Forward characteristics of body diode parameter Gate 12 Avalanche energy E AS par =25°C j(START µ Page 7 SPU04N60S5 SPD04N60S5 ) µ SPU04N60S5 °C typ 150 °C typ °C (98 150 °C (98 0.4 0.8 1 160 120 100 ...

Page 8

... C rss 100 200 300 Rev. 2.5 14 Avalanche power losses parameter: E 200 W 150 125 100 100 °C 180 Typ oss 3.5 µJ 2.5 2 1.5 1 0.5 0 400 V 600 Page 8 SPU04N60S5 SPD04N60S5 =0.4mJ stored energy oss ) DS 100 200 300 400 2008-04- 600 V DS ...

Page 9

... Definition of diodes switching characteristics Rev. 2.5 Page 9 SPU04N60S5 SPD04N60S5 2008-04-08 ...

Page 10

... PG-TO252-3-1, PG-TO252-3-11, PG-TO252-3-21 (D-PAK) Rev. 2.5 Page 10 SPU04N60S5 SPD04N60S5 2008-04-08 ...

Page 11

... PG-TO251-3-1, PG-TO251-3-21 (I-PAK) Rev. 2.5 Page 11 SPU04N60S5 SPD04N60S5 2008-04-08 ...

Page 12

... Rev. 2.5 Page 12 SPU04N60S5 SPD04N60S5 2008-04-08 ...

Related keywords